Monolithic reconfigurable optical multiplexer systems and methods
    1.
    发明申请
    Monolithic reconfigurable optical multiplexer systems and methods 失效
    单片可重构光复用器系统和方法

    公开(公告)号:US20040114856A1

    公开(公告)日:2004-06-17

    申请号:US10721849

    申请日:2003-11-25

    Abstract: A silicon demultiplexer, a plurality of silicon switches and a silicon multiplexer are monolithicaily integrated on a single silicon chip. In embodiments, the silicon demultiplexer and the silicon multiplexer each comprise a diffraction grating. In other embodiments, the silicon demultiplexer and the silicon multiplexer each comprise an arrayed waveguide grating. In various exemplary embodiments, the silicon optical switches comprise optical switches, micromachined torsion mirrors, electrostatic micromirrors, and/or tilting micromirrors. In use, an optical signal comprising a multiplexed data stream is input into the monolithic reconfigurable optical multiplexer. An optical signal that comprises a modified multiplexed data stream may be output. In an optical communications system, the silicon demultiplexer communicates with an input optical fiber, the plurality of silicon optical switches communicate between the silicon demultiplexer and the silicon multiplexer, and the silicon multiplexer communicates with an output optical fiber. In various embodiments, the optical switches are fabricated to be self-aligned.

    Abstract translation: 硅解复用器,多个硅开关和硅复用器整体地集成在单个硅芯片上。 在实施例中,硅解复用器和硅多路复用器各自包括衍射光栅。 在其他实施例中,硅解复用器和硅多路复用器均包括阵列波导光栅。 在各种示例性实施例中,硅光开关包括光开关,微机械扭转镜,静电微镜和/或倾斜微镜。 在使用中,包括复用数据流的光信号被输入到单片可重构光复用器。 可以输出包括修改的多路复用数据流的光信号。 在光通信系统中,硅解复用器与输入光纤通信,多个硅光开关在硅解复用器和硅多路复用器之间通信,并且硅复用器与输出光纤通信。 在各种实施例中,光开关被制造成自对准。

    Systems and methods for integration of heterogeneous circuit devices
    2.
    发明申请
    Systems and methods for integration of heterogeneous circuit devices 失效
    用于集成异构电路器件的系统和方法

    公开(公告)号:US20040084745A1

    公开(公告)日:2004-05-06

    申请号:US10727692

    申请日:2003-12-04

    Abstract: A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.

    Abstract translation: 异质器件包括衬底和限定在衬底中的多个异质电路器件。 在实施例中,通过依次掩蔽和离子注入衬底来整合多个异构电路器件。 异质装置还可以包括至少一个基于微机电系统的元件和/或至少一个光电二极管。 在实施例中,异质电路器件包括至少一个CMOS晶体管和至少一个DMOS晶体管。 在实施例中,衬底包括硅层或p型硅层。 在其它实施例中,衬底包括绝缘体上硅晶片,其包括单晶硅层或单晶P硅层,衬底和绝缘体层之间。

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