公开(公告)号：US20180294293A1

公开(公告)日：2018-10-11

申请号：US15544023

申请日：2017-05-16

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Haijie Zhang ,  Zhandong Zhang ,  Ling Yang

IPC: H01L27/12

CPC classification number: H01L27/1296 ,  H01L27/124 ,  H01L27/127

Abstract: The invention provides a TFT substrate manufacturing method and TFT substrate. The TFT substrate manufacturing method first etches the gate insulation layer to form two first through-holes and forming two bridging metal blocks inside the two first through holes; then etches the interlayer dielectric layer to form two second through-holes connecting respectively the two first through-holes, the source and drain connecting the two bridging metal blocks respectively through the two second through-holes. By changing a conventional etching process into two etching process to form the through-hole structure on the gate insulation layer and interlayer dielectric layer, able to improve uniformity of the active layer, reduce process difficulty, avoid the problem of etching stopped due to higher etching thickness, and improve the product quality.

公开(公告)号：US10181484B2

公开(公告)日：2019-01-15

申请号：US15544023

申请日：2017-05-16

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Haijie Zhang ,  Zhandong Zhang ,  Ling Yang

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12

Abstract: The invention provides a TFT substrate manufacturing method and TFT substrate. The TFT substrate manufacturing method first etches the gate insulation layer to form two first through-holes and forming two bridging metal blocks inside the two first through holes; then etches the interlayer dielectric layer to form two second through-holes connecting respectively the two first through-holes, the source and drain connecting the two bridging metal blocks respectively through the two second through-holes. By changing a conventional etching process into two etching process to form the through-hole structure on the gate insulation layer and interlayer dielectric layer, able to improve uniformity of the active layer, reduce process difficulty, avoid the problem of etching stopped due to higher etching thickness, and improve the product quality.