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    Method for preparing catalyst for partial oxidation of methylbenzenes
    1.
    发明授权
    Method for preparing catalyst for partial oxidation of methylbenzenes 有权
    制备甲基苯部分氧化催化剂的方法

    公开(公告)号：US07538253B2

    公开(公告)日：2009-05-26

    申请号：US11602324

    申请日：2006-11-21

    Applicant: Won Ho Lee ,  Dong Il Lee ,  Jong Hyun Chae ,  Hyun Kyung Yoon

    Inventor： Won Ho Lee ,  Dong Il Lee ,  Jong Hyun Chae ,  Hyun Kyung Yoon

    IPC: B01J31/00 ,  B01J23/00 ,  B01J21/00 ,  C07C45/00 ,  C07C31/13

    CPC classification number: B01J23/30 ,  B01J21/04 ,  B01J37/0036 ,  B01J37/0221 ,  B01J37/0236

    Abstract: The present invention relates to a novel method for preparing a catalyst of the formula (1), WOx wherein, W represents tungsten atom, O represents oxygen atom x represents a value determined by oxidative state of W, for partial oxidation of methylbenzenes, the method comprising: (a) a step of preparing tungsten oxide slurry by wet milling; (b) a step of supporting the slurry obtained in the step (a) on fire-resistance inorganic carrier by impregnation; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), and can reduce the reaction temperature on the basis of equivalent yield in the preparation of corresponding aromatic aldehyde from methylbenzenes since the catalyst has increased the surface areas compared to the conventional one, and thus has high conversion rate.

    Abstract translation: 本发明涉及一种制备式（1）的催化剂的新方法，其中<？in-line-formula description =“In-line Formulas”end =“lead”→> WOx <？in-line-formula description 其中，W表示钨原子，O表示氧原子，x表示由氧化态W确定的值，用于甲基苯的部分氧化，该方法包括：（a） 通过湿磨制备氧化钨浆料的步骤; （b）通过浸渍将在步骤（a）中获得的浆料支撑在耐火无机载体上的步骤; （c）干燥步骤（b）中获得的催化剂的步骤; 和（d）煅烧步骤（c）中获得的干燥催化剂的步骤，并且可以基于由甲基苯制备相应的芳族醛的当量产率来降低反应温度，因为催化剂与表面积相比增加了 因此具有高转换率。

    Catalyst for partial oxidation of methylbenzenes, method for preparing the same, and method for producing aromatic aldehydes using the same
    3.
    发明申请
    Catalyst for partial oxidation of methylbenzenes, method for preparing the same, and method for producing aromatic aldehydes using the same 有权
    用于部分氧化甲基苯的催化剂，其制备方法以及使用其制备芳族醛的方法

    公开(公告)号：US20080021248A1

    公开(公告)日：2008-01-24

    申请号：US11603213

    申请日：2006-11-22

    Applicant: Won Ho Lee ,  Hyun Kyung Yoon ,  Dong Il Lee ,  Jong Hyun Chae ,  Ji Hyang Son ,  In Kyu Park ,  Won Jae Lee

    Inventor： Won Ho Lee ,  Hyun Kyung Yoon ,  Dong Il Lee ,  Jong Hyun Chae ,  Ji Hyang Son ,  In Kyu Park ,  Won Jae Lee

    IPC: B01J23/30 ,  C07C45/90

    CPC classification number: B01J23/30 ,  B01J23/888 ,  B01J37/0201 ,  C07C45/36 ,  C07C47/544

    Abstract: A catalyst for gas phase oxidation of methylbenzenes in the presence of molecular oxygen to produce corresponding aromatic aldehydes, a method for preparing the catalyst, and a method for producing aromatic aldehydes from methylbenzenes by using the catalyst. The catalyst comprises a compound represented by the following formula (1): WaXbYcOx   (1) wherein W represents a tungsten atom, X represents one or more alkali metals selected from the group consisting of Li, Na, K, Rb, and Cs, Y represents one or more elements selected from the group consisting of Fe, Co, Ni, Cu, Mn, Re, Cr, V, Nb, Ti, Zr, Zn, Cd, Y, La, Ce, B, Al, Sn, Mg, Ca, Sr, and Ba, O stands for an oxygen atom, and the ratio of a:b:c is 12:0.001˜1:0˜5.

    Abstract translation: 用于在分子氧存在下甲基苯气相氧化以产生相应的芳族醛的催化剂，制备该催化剂的方法，以及通过使用该催化剂由甲基苯制备芳族醛的方法。 催化剂包含由下式（1）表示的化合物：<？in-line-formula description =“In-line formula”end =“lead”？> W （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中W表示（x，y） 钨原子，X表示选自Li，Na，K，Rb和Cs中的一种以上的碱金属，Y表示选自Fe，Co，Ni，Cu，Mn， Re，Cr，V，Nb，Ti，Zr，Zn，Cd，Y，La，Ce，B，Al，Sn，Mg，Ca，Sr和Ba，O表示氧原子， b：c为12：0.001〜1：0〜5。

    Method for preparing catalyst for partial oxidation of methylbenzenes
    4.
    发明授权
    Method for preparing catalyst for partial oxidation of methylbenzenes 有权
    制备甲基苯部分氧化催化剂的方法

    公开(公告)号：US07696387B2

    公开(公告)日：2010-04-13

    申请号：US11435212

    申请日：2006-05-17

    Applicant: Won Ho Lee ,  Dong Il Lee ,  Jong Hyun Chae ,  Hyun Kyung Yoon

    Inventor： Won Ho Lee ,  Dong Il Lee ,  Jong Hyun Chae ,  Hyun Kyung Yoon

    IPC: B01J23/00 ,  B01J21/00 ,  B01J20/00 ,  C07C45/00 ,  C07C45/90

    CPC classification number: B01J23/30 ,  B01J37/0201 ,  B01J37/0205 ,  C07C45/36 ,  C07C47/544

    Abstract: The present invention relates to a novel method for preparing a catalyst for partial oxidation of methylbenzenes, comprising, (a) a step of preparing a solution or slurry of the compounds comprising tungsten; (b) a step of supporting the solution or slurry obtained in the step (a) on inorganic carrier; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), characterized in that the ratio of the pore volume of inorganic carrier and the volume of the solution or slurry in the step (b) is 1:0.9˜1.1, and the catalyst provides superior aromatic aldehydes selectivity to those prepared by the conventional impregnation or heat evaporation method over a wide range of conversion rate.

    Abstract translation: 本发明涉及一种制备甲基苯部分氧化催化剂的新方法，包括（a）制备包含钨的化合物的溶液或浆料的步骤; （b）将无机载体上的工序（a）得到的溶液或浆料进行负载的工序; （c）干燥步骤（b）中获得的催化剂的步骤; 和（d）煅烧步骤（c）中获得的干燥催化剂的步骤，其特征在于步骤（b）中无机载体的孔体积与溶液或浆料的体积比为1:0.9〜 1.1，并且催化剂在宽范围的转化率下为通过常规浸渍或热蒸发法制备的那些提供优异的芳族醛选择性。

    Liquid crystal display device and fabricating method thereof
    7.
    发明授权
    Liquid crystal display device and fabricating method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号：US08351006B2

    公开(公告)日：2013-01-08

    申请号：US12153050

    申请日：2008-05-13

    Applicant: Ho Jin Ryu ,  Won Ho Lee ,  Young Min Jeong

    Inventor： Ho Jin Ryu ,  Won Ho Lee ,  Young Min Jeong

    IPC: G02F1/1343

    CPC classification number: G02F1/134363 ,  G02F1/13439

    Abstract: A liquid crystal display device includes a gate line and a data line crossing each other to define a pixel region, a thin film transistor positioned at the crossing of the gate line and the data line, a common line extending in parallel to the gate line, a common electrode connected to the common line and having common finger portions extending into the pixel region, and a pixel electrode connected to a drain electrode of the thin film transistor and having pixel finger portions extending into the pixel region and overlapping the common line.

    Abstract translation: 液晶显示装置包括：栅极线和数据线，彼此交叉以限定像素区;位于栅极线与数据线交叉的薄膜晶体管;与栅极线平行延伸的公共线; 连接到公共线并具有延伸到像素区域中的公共指部的公共电极和连接到薄膜晶体管的漏极的像素电极，并且具有延伸到像素区域中并与公共线重叠的像素指状部分。

    In-plane switching mode liquid crystal display device
    8.
    发明授权
    In-plane switching mode liquid crystal display device 有权
    平面切换模式液晶显示装置

    公开(公告)号：US08194218B2

    公开(公告)日：2012-06-05

    申请号：US11158477

    申请日：2005-06-22

    Applicant: Won Seok Kang ,  Won Ho Lee

    Inventor： Won Seok Kang ,  Won Ho Lee

    IPC: G02F1/1343

    CPC classification number: G02F1/134363

    Abstract: An In-Plane Switching (IPS) mode LCD device is disclosed, to prevent the distortion of transverse electric field in a method of decreasing a line width of a common electrode overlapped with a pixel electrode, which includes intersecting gate and data lines that define a pixel region; thin film transistors at an intersection point of the gate and data lines; pixel electrodes formed in the pixel region and connected with a thin film transistor; and common electrodes arranged between the pixel electrodes of the pixel region; wherein, the outermost common electrode, formed adjacent to the data line, is partially overlapped with the pixel electrode, and the line width of the predetermined portion of the outermost common electrode overlapped with the pixel electrode is smaller than the remaining portions of the outermost common electrode.

    Abstract translation: 公开了一种面内切换（IPS）模式LCD装置，以防止在与像素电极重叠的公共电极的线宽减小的方法中横向电场的变形，该像素电极包括相交的栅极和限定一个 像素区域 在栅极和数据线的交点处的薄膜晶体管; 像素电极，形成于像素区域并与薄膜晶体管连接; 以及布置在像素区域的像素电极之间的公共电极; 其特征在于，与数据线相邻形成的最外侧公共电极与像素电极部分重叠，与该像素电极重叠的最外侧公共电极的规定部分的线宽比最外侧公共电极的剩余部分小 电极。

    In-plane switching mode liquid crystal display device and method for manufacturing the same
    9.
    发明授权
    In-plane switching mode liquid crystal display device and method for manufacturing the same 有权
    面内切换模式液晶显示装置及其制造方法

    公开(公告)号：US07502086B2

    公开(公告)日：2009-03-10

    申请号：US11080638

    申请日：2005-03-16

    Applicant: Hyeon Ho Son ,  Won Ho Lee

    Inventor： Hyeon Ho Son ,  Won Ho Lee

    IPC: G02F1/1343

    CPC classification number: G02F1/134363 ,  G02F1/136213 ,  G02F2001/134318 ,  G02F2001/134345

    Abstract: In an IPS mode LCD device and method, a plurality of sub-blocks are utilized to maintain a maximum transmittance even when a voltage above a predetermined value is applied to the device. The IPS mode LCD device includes a common electrode including a plurality of first segments and a plurality of second segments to define a plurality of blocks, wherein the plurality of first segments are formed substantially parallel to the gate line in the pixel region, and the plurality of second segments are formed substantially parallel to the data line, and connected to the first segments; and a pixel electrode including a plurality of third segments and at least one fourth segment, and being connected with a drain electrode of the thin film transistor, wherein each of the third segments is positioned between the first segments, and the at least one fourth segment connects the third segments.

    Abstract translation: 在IPS模式的LCD装置和方法中，即使当高于预定值的电压被施加到装置时，也使用多个子块来保持最大透射率。 IPS模式LCD装置包括包括多个第一段的公共电极和用于限定多个块的多个第二段，其中多个第一段基本上平行于像素区域中的栅极线形成，并且多个 第二段的形状基本上平行于数据线形成，并连接到第一段; 以及包括多个第三段和至少一个第四段的像素电极，并且与薄膜晶体管的漏电极连接，其中每个第三段位于第一段之间，并且至少一个第四段 连接第三段。

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