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    Light emitting diode and method of fabricating the same
    1.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号：US08628983B2

    公开(公告)日：2014-01-14

    申请号：US13368122

    申请日：2012-02-07

    申请人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

    摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

    Light emitting diode and method of fabricating the same
    5.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号：US08395166B2

    公开(公告)日：2013-03-12

    申请号：US12811047

    申请日：2008-12-24

    申请人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    IPC分类号： H01L29/205 ,  H01L33/00

    CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

    摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20100289040A1

    公开(公告)日：2010-11-18

    申请号：US12811047

    申请日：2008-12-24

    申请人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

    IPC分类号： H01L33/10 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62 ,  H01L21/78

    CPC分类号： H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

    摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译： 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

    Light emitting diode having electrode pads
    7.
    发明授权
    Light emitting diode having electrode pads 有权
    具有电极焊盘的发光二极管

    公开(公告)号：US08309971B2

    公开(公告)日：2012-11-13

    申请号：US12974917

    申请日：2010-12-21

    申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

    Patterned substrate for light emitting diode and light emitting diode employing the same
    9.
    发明授权
    Patterned substrate for light emitting diode and light emitting diode employing the same 有权
    用于发光二极管的图案衬底和采用其的发光二极管

    公开(公告)号：US08614458B2

    公开(公告)日：2013-12-24

    申请号：US12090050

    申请日：2006-11-28

    申请人： Yeo Jin Yoon ,  Won Cheol Seo

    发明人： Yeo Jin Yoon ,  Won Cheol Seo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/005 ,  H01L33/22

    摘要： Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

    摘要翻译： 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

    Light emitting diode having electrode extensions for current spreading
    10.
    发明授权
    Light emitting diode having electrode extensions for current spreading 有权
    具有用于电流扩展的电极延伸的发光二极管

    公开(公告)号：US08680559B2

    公开(公告)日：2014-03-25

    申请号：US12941536

    申请日：2010-11-08

    申请人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

    发明人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

    摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。