Cap layer able to be reactive ion etched for RSB DFL read elements

    公开(公告)号:US12094499B1

    公开(公告)日:2024-09-17

    申请号:US18349803

    申请日:2023-07-10

    摘要: The present disclosure generally relates to a dual free layer (DFL) read head. In one embodiment, a dual free layer (DFL) read head, comprising: a tunnel magneto resistance (TMR) sensor disposed at a media facing surface (MFS); soft bias (SB) side shields disposed adjacent to the TMR sensor at the MFS; and a rear soft bias (RSB) disposed adjacent to the TMR sensor recessed from the MFS. The RSB has a nonmagnetic cap, the nonmagnetic cap comprising: a first nonmagnetic cap layer; and a second nonmagnetic cap layer, wherein an etch selectivity of the first nonmagnetic cap layer to the second nonmagnetic cap layer is a ratio of a:b in a first chemistry and a ratio of x:y in a second chemistry, wherein a is greater than b, and y is greater than x, and the second nonmagnetic cap layer is disposed on the first nonmagnetic cap layer.