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公开(公告)号:US20180097191A1
公开(公告)日:2018-04-05
申请号:US15126584
申请日:2016-04-01
Inventor: Xuanyun WANG
IPC: H01L51/05 , H01L27/32 , H01L21/205 , H01L21/3065 , H01L29/16 , H01L29/786 , H01B1/24
CPC classification number: H01L51/0558 , H01B1/24 , H01L21/205 , H01L21/3065 , H01L27/32 , H01L29/16 , H01L29/1606 , H01L29/66045 , H01L29/786 , H01L29/78684 , H01L51/0512
Abstract: The present invention provides a method for manufacturing a graphene thin-film transistor, which includes: depositing a graphene layer on a surface of a copper foil; depositing a metal layer on a surface of the graphene layer; attaching a support layer to a surface of the metal layer to form a graphene film; placing the graphene film in a copper etching solution until the copper foil is dissolved completely, then transferring the graphene film to a target substrate, and removing the support layer; defining patterns of a source and a drain on the surface of the metal layer, manufacturing a source electrode and a drain electrode, and manufacturing a gate electrode on a target substrate.
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2.
公开(公告)号:US20180294314A1
公开(公告)日:2018-10-11
申请号:US15541471
申请日:2017-05-16
Inventor: Zhe LIU , Xuanyun WANG
Abstract: The invention provides a manufacturing method for complementary TFT device. The manufacturing method for complementary TFT device uses a solution method to continuously form a metal oxide semiconductor TFT and an organic semiconductor TFT; the metal oxide semiconductor TFT and the organic semiconductor TFT are electrically connected, and one of the metal oxide semiconductor TFT and the organic semiconductor TFT is an N-type channel TFT, and the other is a P-type channel TFT. The method can reduce the use of vacuum apparatus and high temperature apparatus, and explore the advantages of the solution method to realize large area and low-cost to reduce production costs and increase product competitiveness. The invention also provides a manufacturing method for OLED display panel, able to reduce production cost and increase product competitiveness.
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