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公开(公告)号:US20220059578A1
公开(公告)日:2022-02-24
申请号:US16605417
申请日:2019-09-18
Inventor: Fei AI , Dewei SONG , Guoheng YIN
IPC: H01L27/12 , H01L29/786 , H01L29/66
Abstract: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a plurality of thin film transistors disposed on the substrate, and a planarization layer covering the plurality of thin film transistors and filled a region defined by the plurality of thin film transistors and the substrate.
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公开(公告)号:US20210408068A1
公开(公告)日:2021-12-30
申请号:US16757130
申请日:2019-11-14
Inventor: Juncheng XIAO , Yong XU , Fei AI , Guoheng YIN
IPC: H01L27/12
Abstract: An array substrate, a method of manufacturing the same, and a display device are provided. The array substrate includes a first active layer and a second active layer. A material of the first active layer comprises low temperature poly-silicon. A material of the second active layer comprises an oxide semiconductor. The first active layer and the second active layer are disposed at different layers and horizontally staggered.
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