公开(公告)号：US20190265565A1

公开(公告)日：2019-08-29

申请号：US16110197

申请日：2018-08-23

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Xiaohui NIE ,  Zhihao CAO ,  Qi DING

IPC: G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044

Abstract: The present invention relates to a display panel technology field. An array substrate comprises a first metal layer, a buffer layer, a semiconductor layer, an insulating layer, a scanning metal layer, an inter layer dielectric, and a second metal layer that are sequentially stacked on a glass substrate along a first direction, and a first pixel set and a second pixel set that are arranged alternately along a second direction; and a first conductive path sequentially connecting the first pixel set and a second conductive path sequentially connecting the second pixel set. The first conductive path and the second conductive path change lines alternately in the first metal layer and the second metal layer, such that the first pixel set and the second pixel set are sequentially connected in series. With the array substrate of the present invention, the metal layer for changing line can be eliminated.18

公开(公告)号：US20190096927A1

公开(公告)日：2019-03-28

申请号：US15744174

申请日：2017-11-24

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD

Inventor： Qi DING ,  Zhandong ZHANG ,  Li WANG

IPC: H01L27/12 ,  H01L21/027 ,  H01L21/266 ,  H01L29/66 ,  H01L29/786 ,  G03F1/32

Abstract: A manufacturing method of a thin film transistor is provided, which comprising the steps of: providing a substrate which includes a film layer; coating a photoresist material on the film layer to form a photoresist layer; executing an exposure process to the photoresist layer by using a mask, wherein the mask includes a central region and a boundary region surrounding the central region, a thickness of the central region is greater than that of the boundary region, and by having the thickness of the central region greater than that of the boundary region during the exposure process applied to the photoresist layer, loading effect happened during the development process is cancelled to uniformize a thickness of the film layer. A mask, a thin film transistor, and a display device are also provided in the present invention.