SOLID-STATE IMAGE SENSOR
    2.
    发明公开

    公开(公告)号:US20230343808A1

    公开(公告)日:2023-10-26

    申请号:US17726202

    申请日:2022-04-21

    IPC分类号: H01L27/146

    摘要: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20230326942A1

    公开(公告)日:2023-10-12

    申请号:US17716079

    申请日:2022-04-08

    IPC分类号: H01L27/146

    摘要: An image sensor includes a sensor unit, a sensing portion disposed within the sensor unit, and an isolation structure corresponding to the sensing portion. The isolation structure includes a first deep trench isolation (DTI) structure surrounding the sensor unit from top view, and a second deep trench isolation structure laterally enclosed by the first deep trench isolation structure. The second deep trench isolation structure is located close to a corner of the sensor unit defined by the first deep trench isolation structure. The second deep trench isolation structure is asymmetrical with respect to a horizontal middle line or a vertical middle line within the sensor unit.