公开(公告)号：US20250072021A1

公开(公告)日：2025-02-27

申请号：US18237034

申请日：2023-08-23

Applicant: Unity Power Technology Limited

Inventor： Wai Tien CHAN

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78

Abstract: A silicon carbide MOSFET device which contains a N-Channel MOSFET, and a JFET connected to the N-Channel MOSFET such that their drain-source current paths are connected in series. A gate of the JFET is connected to a gate of the N-Channel MOSFET device via a voltage divider, which is formed monolithically with the silicon carbide substrate and the first to fourth silicon carbide layers. The protection gate structure can shield the trench oxide from high drain voltage during off-state. The voltage divider is configured to restrict a gate voltage of the JFET such that a SiC PN diode formed within the silicon carbide MOSFET device is turned off when the N-Channel MOSFET is on or off.