公开(公告)号：US20240345469A1

公开(公告)日：2024-10-17

申请号：US18308670

申请日：2023-04-27

Applicant: United Microelectronics Corp.

Inventor： Chia-Chen Sun ,  En-Chiuan Liou ,  Song-Yi Lin

IPC: G03F1/38

CPC classification number: G03F1/38 ,  H01L21/0273

Abstract: A photomask structure including a layout pattern, a first L-type assist pattern, and a second L-type assist pattern is provided. An end portion of the layout pattern includes a first edge, a second edge, and a third edge. The second edge is connected to one end of the first edge, and the third edge is connected to another end of the first edge. The first L-type assist pattern is located between the second L-type assist pattern and the first edge. The layout pattern, the first L-type assist pattern, and the second L-type assist pattern are separated from each other. The first L-type assist pattern surrounds the first edge and the second edge. The second L-type assist pattern surrounds the first edge and the third edge.

公开(公告)号：US11475202B1

公开(公告)日：2022-10-18

申请号：US17323893

申请日：2021-05-18

Applicant: United Microelectronics Corp.

Inventor： Ming-Hsien Kuo ,  Chih-Wei Hsu ,  Song-Yi Lin

IPC: G06F30/30 ,  G03F1/36 ,  G03F7/20 ,  G06F30/398 ,  G06F30/392 ,  G06F119/18

Abstract: A method of designing a semiconductor device includes creating a library for test patterns on a frame and an on purpose violation layout on a main chip of a layout, and then creating filter marks according to the library. An OPC (optical proximity correction) is run using the layout, and an OPC verifying is performed for obtaining a pattern with hot spots to determine whether the hot spots are within the frame and the filter marks. When the hot spots are within the frame and the filter marks, a mask can be made. When the hot spots are outside the frame and the filter marks, it is necessary to check whether the hot spots need to be repaired. When the hot spots are within the frame and outside the filter marks, the hot spots are added into the library as data of the on purpose violation layout.

公开(公告)号：US20240012322A1

公开(公告)日：2024-01-11

申请号：US17878026

申请日：2022-07-31

Applicant: United Microelectronics Corp.

Inventor： Chia-Chen Sun ,  Song-Yi Lin ,  En-Chiuan Liou

IPC: G03F1/38 ,  G03F1/26

CPC classification number: G03F1/38 ,  G03F1/26

Abstract: A photomask structure including a layout pattern and at least one assist pattern is provided. The layout pattern includes corners. The assist pattern wraps at least one of the corners. There is a gap between the edge of the layout pattern and the assist pattern.

公开(公告)号：US20240393676A1

公开(公告)日：2024-11-28

申请号：US18334382

申请日：2023-06-14

Applicant: United Microelectronics Corp.

Inventor： Ming-Hsien Kuo ,  Chih-Hsien Tang ,  Song-Yi Lin

IPC: G03F1/70 ,  G06F30/398

Abstract: A design method of a photomask structure including the following steps is provided. A layout pattern is provided. The layout pattern includes first to third basic patterns. The second basic pattern is located between the first and third basic patterns and connected to the first and third basic patterns. There is a first jog portion between the first and second basic patterns, there is a second jog portion between the second and third basic patterns, and the first and second jog portions are located at two opposite sides of the layout pattern. The first and second jog portions are moved to align the first and second jog portions with each other and to eliminate the second basic pattern, wherein a first area change amount produced by moving the first jog portion is equal to a second area change amount produced by moving the second jog portion.

公开(公告)号：US20240210816A1

公开(公告)日：2024-06-27

申请号：US18165937

申请日：2023-02-08

Applicant: United Microelectronics Corp.

Inventor： Chia-Chen Sun ,  En-Chiuan Liou ,  Song-Yi Lin

IPC: G03F1/70 ,  G03F1/36 ,  G06F30/392

CPC classification number: G03F1/70 ,  G03F1/36 ,  G06F30/392

Abstract: A method includes providing a layout pattern to a computer system. The layout pattern includes a first pattern, a second pattern, and a third pattern. A central line defined by connecting a line end of the second pattern and a line end of the third pattern overlaps with a middle portion of the first pattern. An optical proximity correction (OPC) is performed on the layout pattern to form a first auxiliary pattern. The first auxiliary pattern includes a first stripe pattern and a second stripe pattern both extending from the line end of the second pattern. The second stripe pattern is closer to the first pattern than the first stripe pattern, and an extending length of the second stripe pattern is less than an extending length of the first stripe pattern. The layout pattern and the first auxiliary pattern are outputted through the computer system onto a photomask.

公开(公告)号：US20240085780A1

公开(公告)日：2024-03-14

申请号：US17965730

申请日：2022-10-13

Applicant: United Microelectronics Corp.

Inventor： Chia-Chen Sun ,  En-Chiuan Liou ,  Song-Yi Lin

IPC: G03F1/76 ,  G03F1/36

CPC classification number: G03F1/76 ,  G03F1/36

Abstract: A photomask structure having a first region and a second region is provided. The layout pattern density of the first region is smaller than the layout pattern density of the second region. The photomask structure includes a first layout pattern, a second layout pattern, and first assist patterns. The first layout pattern is located in the first region and the second region. The second layout pattern is located in the second region. The second layout pattern is located on one side of the first layout pattern. The first assist patterns are located on the first sidewall of the first layout pattern and separated from each other. The first sidewall is adjacent to the second layout pattern. The first assist patterns are adjacent to a boundary between the first region and the second region. The lengths of two adjacent first assist patterns decrease in the direction away from the boundary.