公开(公告)号：US3545940A

公开(公告)日：1970-12-08

申请号：US3545940D

申请日：1967-09-21

申请人： US AIR FORCE

发明人： O'CONNOR JOHN J ,  RUBIN BERNARD ,  ARMINGTON ALTON F

IPC分类号： C30B5/00 ,  B01D9/02 ,  C01B9/02 ,  C01G3/04

CPC分类号： C30B5/00 ,  C30B29/12

公开(公告)号：US3600294A

公开(公告)日：1971-08-17

申请号：US3600294D

申请日：1967-08-15

申请人： US AIR FORCE

发明人： RUBIN BERNARD ,  O'CONNOR JOHN J

IPC分类号： C30B7/12 ,  B01K3/00 ,  C23B5/00 ,  C23B7/00

CPC分类号： C30B7/12

摘要： AN APPARATUS AND METHOD FOR GROWING SINGLE CRYSTALS COMPRISING AN ELECTROCHEMICAL CIRCUIT INCLUDING A MEANS FOR ALTERNATING IN AN ASYMMETRICALLY TIMED MANNER THE DIRECTION OF CURRENT FLOW WITHIN THE ELECTROCHEMICAL CIRCUIT. ALSO INCLUDED IS A MEANS TO EFFECT THE VERTICAL MOVEMENT OF THE ELECTROCHEMICAL CIRUIT''S ELECTROLYTE IN A DOWNWARD DIRECTION AWAY FROM A GROWING CRYSTAL AT A RATE SUBSTANTIALLY SIMILAR TO THE RATE OF GROWTH OF THE GROWING CRYSTAL.

公开(公告)号：US3578414A

公开(公告)日：1971-05-11

申请号：US3578414D

申请日：1967-10-24

申请人： US AIR FORCE

发明人： ARMINGTON ALTON F ,  O'CONNOR JOHN J

IPC分类号： C30B5/00 ,  B01D9/02

CPC分类号： C30B5/00 ,  C30B29/12 ,  Y10T117/10

摘要： AN APPARATUS FOR GROWING SINGLE CRYSTALS OF A RELATIVELY LARGE SIZE HAVING FIRST AND SECOND REACTANT CONTAINING RESERVOIRS RESPECTIVELY POSSESSING RELATIVELY LARGE VOLUMES IN RELATION TO THE VOLUME OF A CRYSTAL GROWING CHAMBER POSITIONED IN A HORIZONTAL RELATIONSHIP BETWEEN THE RESERVOIRS AND INTERCONNECTED THERETO. CRYSTAL GROWTH IS EFFECTED IN A GEL MATRIX POSITIONED WITHIN THE CRYSTAL GROWING CHAMBER WITH THE FIRST AND SECOND RESERVOIRS CONTAINING THE REQUIRED CRYSTAL GROWING SOLUTIONS NEEDED TO BRING ABOUT CRYSTAL GROWTH.

公开(公告)号：US3671200A

公开(公告)日：1972-06-20

申请号：US3671200D

申请日：1969-05-06

申请人： US AIR FORCE

发明人： ARMINGTON ALTON F ,  O'CONNOR JOHN J

IPC分类号： C30B7/00 ,  B01J17/04 ,  C01G13/00

CPC分类号： C30B7/00

摘要： A METHOD FOR EFFECTING THE SOLUTION GROWTH OF SINGLE CRYSTALS FROM INSOLUBLE CRYSTAL FORMING MATERIALS. THE METHOD INCLUDES FORMING A SOLUTION OF THE CRYSTAL GROWING MATERIAL BY FIRST COMPLEXING THE MATERIAL TO RENDER IT SOLUBLE FOLLOWED BY THE DECOMPOSITION OR DEACTIVATION OF THE COMPLEXED MATERIAL. THIS ALLOWS THE DESIRED CRYSTAL GROWING MATERIAL TO PRECIPITATE OUT OF SOLUTION IN SINGLE CRYSTAL FORM. DECOMPOSITION IS ACCOMPLISHED BY HEATING THE COMPLEXED SOLUTION AT A TEMPERATURE AND FOR A PERIOD OF TIME SUFFICIENT TO SHIFT THE EQUILBRIUM OF THE CHEMICALLY COMPLEXED MATERIAL AND RENDER IT INSOLUBLE.