公开(公告)号：US20240347503A1

公开(公告)日：2024-10-17

申请号：US18201976

申请日：2023-05-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shing-Ren SHEU ,  Kai-Kuang HO ,  Yu-Jie LIN ,  Kuo-Ming CHEN ,  Yi-Feng HSU

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/94 ,  H01L23/49816 ,  H01L24/04 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/13023 ,  H01L2224/48453 ,  H01L2224/73207 ,  H01L2224/94

Abstract: A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a first chip, a second chip and a conductive structure. The first chip has an active side and an opposite side disposed opposite to each other. The second chip includes a chip bonding portion and an outer pad, and the outer pad is located outside the chip bonding portion. The first chip is disposed on the chip bonding portion of the second chip with the active side. The conductive structure is disposed on the outer pad, and the conductive structure includes a stack of a plurality of metal balls. The stack extends from the outer pad beyond the opposite side of the first chip.