公开(公告)号：US20250072035A1

公开(公告)日：2025-02-27

申请号：US18369209

申请日：2023-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Hung Li ,  Cheng-Yu Ho

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes a first oxide layer and a gate structure. The first oxide layer is disposed on a substrate. The gate structure is disposed on the first oxide layer. The gate structure includes a gate and a spacer surrounding the gate. The first oxide layer includes an exposed segment not covered by the gate structure. A thickness of the first oxide layer right below the gate is fixed, and the thickness of the first oxide layer right below the gate is greater than a thickness of the exposed segment.