公开(公告)号：US20140230560A1

公开(公告)日：2014-08-21

申请号：US13719588

申请日：2012-12-19

Applicant: U.S. Army Research Laboratory

Inventor： Jeffrey Pulskamp ,  Ronald G. Polcawich

IPC: H03H9/205 ,  H03H3/007 ,  G01L1/00

CPC classification number: H03H9/205 ,  G01L1/005 ,  G01L1/16 ,  H03H3/02 ,  H03H2009/155 ,  Y10T29/42

Abstract: Method and apparatus for a piezoelectric apparatus are provided. In some embodiments, a method for fabricating a piezoelectric device may include etching a series of vertical trenches in a top substrate portion, depositing a first continuous conductive layer over the trenches and substrate, depositing a continuous piezoelectric layer over the first continuous conductive layer such that the piezoelectric material has trenches and sidewalls, depositing a second continuous conductive layer over the continuous piezoelectric layer, etching through the vertical trenches of the first continuous conductive layer, continuous piezoelectric layer, second continuous conductive layer, and top substrate portion into a bottom substrate portion, etching a series of horizontal trenches in the bottom substrate portion such that the horizontal trenches and vertical trenches occupy a continuous free space and allow movement of a piezoelectric MEMS device created by the above method in three dimensions.

Abstract translation: 提供了压电装置的方法和装置。 在一些实施例中，用于制造压电器件的方法可以包括蚀刻顶部衬底部分中的一系列垂直沟槽，在沟槽和衬底上沉积第一连续导电层，在第一连续导电层上沉积连续的压电层，使得 压电材料具有沟槽和侧壁，在连续压电层上沉积第二连续导电层，通过第一连续导电层，连续压电层，第二连续导电层和顶部衬底部分的垂直沟槽蚀刻成底部衬底部分 蚀刻底部衬底部分中的一系列水平沟槽，使得水平沟槽和垂直沟槽占据连续的自由空间，并允许通过上述方法在三维中产生的压电MEMS器件的移动。