公开(公告)号：US09536967B2

公开(公告)日：2017-01-03

申请号：US14572670

申请日：2014-12-16

申请人： Transphorm Inc.

发明人： Toshihide Kikkawa ,  Kenji Kiuchi ,  Tsutomu Hosoda ,  Masahito Kanamura ,  Akitoshi Mochizuki

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L29/417 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324 ,  H01L29/66 ,  H01L29/778 ,  H01L21/285 ,  H01L29/20

CPC分类号： H01L29/41766 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

摘要： A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.

摘要翻译： 一种器件包括具有上侧和下侧的III-N层，下侧与上侧相对，以及在III-N层的上侧上的至少一个导电接触，导电接触延伸到III -N层。 导电接触包括背离III-N层的下侧的顶面和面向III-N层的下侧的底侧。 底侧包括与第一端相对的第一端和第二端，第一侧从第一端起升到比第一端更靠近顶侧的中间点，以及从中间点到第二侧的第二侧 从顶侧到中间点为止。

公开(公告)号：US20160172455A1

公开(公告)日：2016-06-16

申请号：US14572670

申请日：2014-12-16

申请人： Transphorm Inc.

发明人： Toshihide Kikkawa ,  Kenji Kiuchi ,  Tsutomu Hosoda ,  Masahito Kanamura ,  Akitoshi Mochizuki

IPC分类号： H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L21/308 ,  H01L21/324 ,  H01L29/778 ,  H01L21/3065

CPC分类号： H01L29/41766 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

摘要： A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.

摘要翻译： 一种器件包括具有上侧和下侧的III-N层，下侧与上侧相对，以及在III-N层的上侧上的至少一个导电接触，导电接触延伸到III -N层。 导电接触包括背离III-N层的下侧的顶面和面向III-N层的下侧的底侧。 底侧包括与第一端相对的第一端和第二端，第一侧从第一端起升到比第一端更靠近顶侧的中间点，以及从中间点到第二侧的第二侧 从顶侧到中间点为止。