发明申请
- 专利标题： RECESSED OHMIC CONTACTS IN A III-N DEVICE
- 专利标题（中）： 在III-N设备中的接触的OHMIC联系
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申请号： US14572670申请日： 2014-12-16
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公开(公告)号： US20160172455A1公开(公告)日： 2016-06-16
- 发明人: Toshihide Kikkawa , Kenji Kiuchi , Tsutomu Hosoda , Masahito Kanamura , Akitoshi Mochizuki
- 申请人： Transphorm Inc.
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/20 ; H01L29/66 ; H01L21/308 ; H01L21/324 ; H01L29/778 ; H01L21/3065
摘要：
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point.
公开/授权文献
- US09536967B2 Recessed ohmic contacts in a III-N device 公开/授权日：2017-01-03
信息查询
IPC分类:
