公开(公告)号：US20240274433A1

公开(公告)日：2024-08-15

申请号：US18456642

申请日：2023-08-28

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi TSUNATORI ,  Takayuki KOMIYA

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02274 ,  H01J2237/332

Abstract: A substrate processing method of embedding a silicon nitride film in a recess formed in a surface of a substrate, includes repeating a cycle, the cycle including: a first operation of supplying a silicon precursor to form an adsorption layer of the silicon precursor on the substrate; a second operation of supplying a first nitrogen-containing gas and supplying a first power to an upper electrode to generate a first plasma, and exposing the substrate to the first plasma to nitride the adsorption layer and form the silicon nitride film; and a third operation of supplying a second nitrogen-containing gas and supplying a second power to a lower electrode to generate a second plasma different from the first plasma, and exposing the substrate to the second plasma to modify an upper portion of the recess and form an adsorption-inhibiting area.