公开(公告)号：US20190096639A1

公开(公告)日：2019-03-28

申请号：US16140948

申请日：2018-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shuichi TAKAHASHI ,  Takaharu MIYADATE ,  Norinao TAKASU ,  Etsuji ITO ,  Akihiro YOKOTA ,  Naohiko OKUNISHI

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

公开(公告)号：US20250149309A1

公开(公告)日：2025-05-08

申请号：US19018319

申请日：2025-01-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki SATO ,  Yuki KAWADA ,  Akihiro YOKOTA

IPC: H01J37/32 ,  H01F7/08

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, a plasma generator, at least one electromagnet, and a power source. The substrate support is provided in the chamber. The substrate support includes a first region on which a substrate is placeable and a second region which surrounds the first region and on which an edge ring is placed. The plasma generator is configured to generate a plasma in the chamber. The at least one electromagnet is configured to generate a magnetic field localized in an annular space above the edge ring. The power source is electrically connected to the at least one electromagnet and is configured to adjust a strength of the magnetic field.

公开(公告)号：US20170103877A1

公开(公告)日：2017-04-13

申请号：US15288205

申请日：2016-10-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO ,  Etsuji ITO ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32669 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.

公开(公告)号：US20170162367A1

公开(公告)日：2017-06-08

申请号：US15378590

申请日：2016-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Etsuji ITO ,  Shinji HIMORI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/67

Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.

公开(公告)号：US20150332898A1

公开(公告)日：2015-11-19

申请号：US14699256

申请日：2015-04-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3266

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract translation: 提供了一种等离子体处理装置，其通过在处理对象基板上施加处理气体的等离子体，对处理对象基板进行处理。 等离子体处理装置包括：处理容器，被配置为容纳处理目标基板; 设置在处理容器中的下电极，用于将处理目标基板安装在其上; 设置在所述处理容器中以与所述下电极相对的上电极，其间插入有处理空间; 高频电源，被配置为在所述上电极和所述下电极之间施加高频电力; 主磁体单元，其包括围绕中心轴布置的一个或多个环形主电磁线圈; 以及辅助磁体单元，被配置为形成在处理空间中垂直或倾斜地穿过中心轴线的磁场。

公开(公告)号：US20130220547A1

公开(公告)日：2013-08-29

申请号：US13767195

申请日：2013-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Etsuji ITO ,  Akihiro YOKOTA ,  Shinji HIMORI ,  Shoichiro MATSUYAMA

IPC: H01L21/465

CPC classification number: H01L21/465 ,  C23C14/35 ,  C23C14/351 ,  C23C14/352 ,  H01J37/32091 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3452 ,  H01L21/32136

Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

Abstract translation: 基板处理装置在供给高频电力的下电极与面向下电极的上电极之间的处理空间中产生电场，通过使用由下述电极产生的等离子体，对安装在下电极上的基板进行等离子体处理 电场。 处理空间中的等离子体密度的分布由通过控制设置在与处理空间相对的上电极的顶表面处设置的多个电磁体而产生的磁场来控制。

公开(公告)号：US20210074511A1

公开(公告)日：2021-03-11

申请号：US17004260

申请日：2020-08-27

Applicant: Tokyo Electron Limited

Inventor： Akihiro YOKOTA

IPC: H01J37/32

Abstract: One disclosed plasma processing system includes a chamber, a substrate support, a plasma generator, and first and second electric magnet assemblies. The substrate support is disposed in the chamber. A center of a substrate on the substrate support is positioned on a central axis of the chamber. The plasma generator is configured to generate a plasma in the chamber. The first electric magnet assembly includes one or more first annular coils and is disposed on or above the chamber and configured to generate a first magnetic field in the chamber. The second electric magnet assembly includes one or more second annular coils and is configured to generate a second magnetic field in the chamber. The second magnetic field reduces the intensity of the first magnetic field in the center of the substrate on the substrate support.

公开(公告)号：US20190244794A1

公开(公告)日：2019-08-08

申请号：US16389434

申请日：2019-04-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3266

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

公开(公告)号：US20190148155A1

公开(公告)日：2019-05-16

申请号：US16183945

申请日：2018-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Akihiro YOKOTA ,  Gen TAMAMUSHI

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.

公开(公告)号：US20230420228A1

公开(公告)日：2023-12-28

申请号：US18462258

申请日：2023-09-06

Applicant: Tokyo Electron Limited

Inventor： Akihiro YOKOTA ,  Ryo TERASHIMA ,  Tomo MURAKAMI ,  Takaharu SAINO

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32935

Abstract: A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.