公开(公告)号：US20240006285A1

公开(公告)日：2024-01-04

申请号：US17855662

申请日：2022-06-30

Applicant: The Intel Corporation

Inventor： Yi Yang ,  Suddhasattwa Nad ,  Xiaoying Guo ,  Jieying Kong ,  Ala Omer ,  Christy Sennavongsa ,  Wei Wei ,  Ao Wang

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48 ,  H05K1/11 ,  H05K3/40 ,  H05K3/22

CPC classification number: H01L23/49822 ,  H01L23/145 ,  H01L23/49866 ,  H01L21/4857 ,  H05K1/115 ,  H05K3/4038 ,  H05K3/22 ,  H01L2224/16227 ,  H01L24/16

Abstract: Substrate assemblies having adhesion promotor layers and related methods are disclosed. An example apparatus includes a substrate, a dielectric layer, a first copper layer between the substrate and the dielectric layer, and a film between the dielectric layer and the first copper layer. The film including silicon and nitrogen and being substantially free of hydrogen. A via in the dielectric layer is to provide access to the first copper layer. A portion of the first copper layer uncovered in the via, a wall of the via and the portion of the first copper layer to be substantially free of fluorine. A seed copper layer positioned on the dielectric layer. The via wall and the portion of the first copper layer. The seed copper layer and the first copper layer define an undercut at an interface between the seed copper layer and the first copper layer.