摘要:
The invention relates to a projection exposure apparatus for detecting a light-intensity distribution of a spatial image of a mask pattern formed through a projection optical system. The projection exposure apparatus has a knife-edge member which is disposed on the main surface of a wafer stage such that a plane including an exposure surface of a photosensitive substrate is leveled with a light incidence surface of the knife-edge member. The knife-edge member has a transmission area for transmitting the exposure light passing through the projection optical system, a light shielding area for preventing transmission of the exposure light, and a knife-edge defined as a boundary line between the transmission area and the light shielding area. The projection exposure apparatus detects the light-intensity distribution of light from the spatial image while moving the spatial image of the mask pattern and the knife-edge of the knife-edge member relatively to each other. The information related to the light-intensity distribution is used in optically adjusting a projection optical system, or the like.
摘要:
The present invention relates to a method of detecting an image formation characteristic of a projection optical system for projecting a reference pattern on a reticle on a substrate. According to the detection method, a reticle stage is moved so that a reference mark on the reticle comes to a first reference position and a second reference position, and a wafer stage is moved so that a light transmission portion on the wafer stage crosses an image forming position of a projected image of the reference mark obtained through the projection optical system. The positions of the reticle stage and the wafer stage at the first and second reference positions are measured as moved distances of the stages, respectively. From the distances of movement of the reticle and wafer stages measured, the image formation characteristic of the projection optical system is calculated.
摘要:
The present invention relates to a method of detecting an image formation characteristic of a projection optical system for projecting a reference pattern on a reticle on a substrate. According to the detection method, a reticle stage is moved so that a reference mark on the reticle comes to a first reference position and a second reference position, and a wafer stage is moved so that a light transmission portion on the wafer stage crosses an image forming position of a projected image of the reference mark obtained through the projection optical system. The positions of the reticle stage and the wafer stage at the first and second reference positions are measured as moved distances of the stages, respectively. From the distances of movement of the reticle and wafer stages measured, the image formation characteristic of the projection optical system is calculated.
摘要:
A projection exposing apparatus for detecting a state of focus at two or more places in exposure region of a projection optical system by a focus state detection device. In accordance with the result of the detection of the focus state at the two or more places, the image forming characteristics of the projection optical system are measured by an image forming characteristics measuring device. A first pattern extending in the sagittal direction and a second pattern extending in the meridional direction are formed so that the focus state is measured by light beams transmitted these patterns and therefore the astigmatism, eccentricity or the spherical aberration is obtained so as to be corrected.
摘要:
In a projection-type optical apparatus in which a projection optical system projects an image of an object upon a substrate, a position detecting sensor mechanically connected to the projection optical system detects the position of the projection optical system relative to the substrate along the optical axis of the projection optical system. A displacement measuring device measures relative displacement between the position detecting sensor and the projection optical system along the optical axis. The substrate is brought into coincidence with an optimum image forming plane of the projection optical system on the basis of the position detected by the position detecting sensor and the displacement measured by the displacement measuring device.
摘要:
A reference mark is formed on an under-surface of a reference mark member that is disposed on a mask stage. The mask stage can be part of a projection exposure apparatus in which a substrate and a mask are moved in respective scanning directions during scanning exposure. The projection exposure apparatus also may include a projection system disposed under the mask stage, with the mask and substrate being provided on opposite sides of projection system. The mask stage may be moved into the image field of the projection system, and the reference mark is detected.
摘要:
The present invention relates to a method of detecting an image formation characteristic of a projection optical system for projecting a reference pattern on a reticle on a substrate. According to the detection method, a reticle stage is moved so that a reference mark on the reticle comes to a first reference position and a second reference position, and a wafer stage is moved so that a light transmission portion on the wafer stage crosses an image forming position of a projected image of the reference mark obtained through the projection optical system. The positions of the reticle stage and the wafer stage at the first and second reference positions are measured as moved distances of the stages, respectively. From the distances of movement of the reticle and wafer stages measured, the image formation characteristic of the projection optical system is calculated.
摘要:
In a multilayer band-pass filter, each of first-stage to third-stage LC parallel resonators includes capacitor electrodes, via electrodes, and a line electrode. Jump-coupling capacitor electrodes face the capacitor electrodes of the first-stage and third-stage LC parallel resonators. The direction in which the inductor electrode extends from the capacitor electrodes of each of the first-stage and third-stage LC parallel resonators is opposite to the direction in which the inductor electrode extends from the capacitor electrodes of the second-stage LC parallel resonator.
摘要:
An electronic component that reduces resistance and prevents occurrence of an edge effect, includes a laminated body formed by stacking insulator layers. Conductor layers are linear conductors, and define coils included in the laminated body. The conductor layers face each other, with the insulator layer interposed therebetween, and allow signals of substantially the same phase to pass therethrough. The conductor layers define regions, each having a shape which decreases in thickness in the z-axis direction with increasing distance from a center thereof in a line width direction.
摘要:
In a laminated band-pass filter, a capacitance is formed between a ground electrode of a ground electrode formation layer and each of capacitor electrodes of capacitor electrode formation layers. An even number of LC parallel resonators is arranged such that via electrodes and line electrodes define a plurality of inductor electrodes and, when viewed in a direction in which the inductor electrodes are arranged, the surfaces of the loops of the inductor electrodes overlap each other at least partially. The loops defined by the inductor electrodes of neighboring LC parallel resonators have opposite directions. The capacitor electrodes have a shape and distribution or arrangement having point symmetry in plan view.