公开(公告)号：US08749058B2

公开(公告)日：2014-06-10

申请号：US13324925

申请日：2011-12-13

申请人： Tatsuya Usami ,  Hideaki Tsuchiya ,  Yukio Miura ,  Tomoyuki Nakamura ,  Koichi Ohto ,  Chikako Ohto ,  Shinji Yokogawa

发明人： Tatsuya Usami ,  Hideaki Tsuchiya ,  Yukio Miura ,  Tomoyuki Nakamura ,  Koichi Ohto ,  Chikako Ohto ,  Shinji Yokogawa

IPC分类号： H01L29/72

CPC分类号： H01L23/53295 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm−1 to 860 cm−1. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.

摘要翻译： 半导体器件包括层间绝缘膜，设置在层间绝缘膜中的布线以及设置在层间绝缘膜上并在布线上的SiN膜。 通过FTIR测量的SiN膜的Si-N键的峰位置在845cm -1至860cm -1的范围内。 这使得可以抑制作为用于防止布线金属扩散的阻挡绝缘膜的氮化硅膜中的电流泄漏。

公开(公告)号：US20120181694A1

公开(公告)日：2012-07-19

申请号：US13324925

申请日：2011-12-13

申请人： Tatsuya Usami ,  Hideaki Tsuchiya ,  Yukio Miura ,  Tomoyuki Nakamura ,  Koichi Ohto ,  Chikako Ohto ,  Shinji Yokogawa

发明人： Tatsuya Usami ,  Hideaki Tsuchiya ,  Yukio Miura ,  Tomoyuki Nakamura ,  Koichi Ohto ,  Chikako Ohto ,  Shinji Yokogawa

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm−1 to 860 cm−1. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.

摘要翻译： 半导体器件包括层间绝缘膜，设置在层间绝缘膜中的布线以及设置在层间绝缘膜上并在布线上的SiN膜。 通过FTIR测量的SiN膜的Si-N键的峰位置在845cm -1至860cm -1的范围内。 这使得可以抑制作为用于防止布线金属扩散的阻挡绝缘膜的氮化硅膜中的电流泄漏。

公开(公告)号：US20120080805A1

公开(公告)日：2012-04-05

申请号：US13200654

申请日：2011-09-28

申请人： Chikako Ohto ,  Tatsuya Usami ,  Shuji Nagano ,  Hideharu Shimizu ,  Tatsuya Ohira ,  Takeshi Kada

发明人： Chikako Ohto ,  Tatsuya Usami ,  Shuji Nagano ,  Hideharu Shimizu ,  Tatsuya Ohira ,  Takeshi Kada

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L21/76834 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/76835

摘要： A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond.

摘要翻译： 根据本发明的半导体器件包括第一Cu互连和第一阻挡绝缘膜。 a第一阻挡绝缘膜设置在第一Cu互连上，并且防止Cu从第一Cu互连扩散。 此外，半导体器件在第一阻挡绝缘膜上包括第二Cu互连和第二阻挡绝缘膜。 第二阻挡绝缘膜设置在第一Cu互连上，并且防止Cu从第二Cu互连扩散。 第一和第二阻挡绝缘膜由具有支链烷基和碳 - 碳双键的硅基绝缘膜制成。