公开(公告)号：US06787816B1

公开(公告)日：2004-09-07

申请号：US09944522

申请日：2001-08-31

Applicant: Tatsing P. Chow ,  Jeffrey B. Fedison

Inventor： Tatsing P. Chow ,  Jeffrey B. Fedison

IPC: H01L2968

CPC classification number: H01L29/66363 ,  H01L29/1608 ,  H01L29/74

Abstract: A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation.

Abstract translation: 提供了一种用于在晶闸管器件的制造中使用离子注入形成一个或多个掺杂层的方法。 例如，这些晶闸管可以由单晶碳化硅制成。 根据本发明的一个方面，与晶体生长中涉及掺杂的常规方法相反，通过在晶体生长后引入掺杂剂来形成所需层之一。 具体地，可以通过使用离子注入技术引入杂质。