公开(公告)号：US09271397B2

公开(公告)日：2016-02-23

申请号：US13878724

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01K1/18 ,  H05K1/18 ,  H01L23/498 ,  H01L25/07 ,  H01L23/049 ,  H01L31/02 ,  H01L23/24 ,  H01L23/31 ,  H01L23/373 ,  H01L23/00 ,  H01L23/29

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.

摘要翻译： 提供了具有优异的耐电压性的电路装置。 实现省略通常设置到电路板的顶表面的树脂层的结构。 具体而言，在包含金属的电路基板（12）的顶面设置有陶瓷基板（22），在陶瓷基板（22）的上表面安装有诸如IGBT的晶体管（34）。 结果，晶体管（34）和电路板（12）通过陶瓷基板（22）彼此绝缘。 包括无机材料的陶瓷基板（22）与常规使用的包含树脂的绝缘层相比具有极高的耐电压性，因此即使将大约1000V的高电压施加到晶体管（34）， 防止晶体管（34）与电路板（12）之间的短路。

公开(公告)号：US20130286618A1

公开(公告)日：2013-10-31

申请号：US13878721

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. The hybrid integrated circuit device (10) is provided with: a circuit board (12); a plurality of ceramic substrates (22A-22G) disposed on the top surface of the circuit board (12); circuit elements such as transistors mounted on the top surface of the ceramic substrates (22A-22G); and a lead (29) or the like that is connected to the circuit elements and is exposed to the outside. Furthermore, in the present embodiment, leads (28, 30, 31A-31C) are disposed superimposed in the vicinity of the center of the circuit board (12), and a circuit element such as an IGBT is disposed and electrically connected approaching the region at which the leads are superimposed. The alternating current transformed by the IGBT is output externally via the leads (31A, etc.).

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 混合集成电路装置（10）具有：电路板（12）; 设置在所述电路板（12）的顶表面上的多个陶瓷基板（22A-22G）; 电路元件，例如安装在陶瓷基板（22A-22G）的顶表面上的晶体管; 以及连接到电路元件并暴露于外部的引线（29）等。 此外，在本实施方式中，引线（28,30,31A-31C）重叠配置在电路基板（12）的中心附近，并且电路元件（例如IGBT）被布置并电连接接近该区域 引线叠加在其上。 由IGBT变换的交流电经由引线（31A等）向外部输出。

公开(公告)号：US08061130B2

公开(公告)日：2011-11-22

申请号：US12374011

申请日：2007-06-25

申请人： Takashi Shibasaki

发明人： Takashi Shibasaki

IPC分类号： F01N7/10

CPC分类号： F01N13/008 ,  F01N13/10 ,  F01N13/1838 ,  F01N13/1872 ,  F01N2450/22

摘要： An exhaust manifold A includes, in its collecting part structure, a plurality of branch pipes 2 to 5 that are connected with a flange head 1, a collecting part 6 that collects and contains exhaust-gas downstream side end portions 2a to 5a of the branch pipes 2 to 5, a partition plate 10 that is arranged in a state where its exhaust-gas downstream side end portion 10a projects in the interior of the collecting part 6, and a sensor attachment boss part 9 that is fixed by weld line X on a part of an outer circumferential portion of the collecting part 6 in a state where it faxes an insertion hole 6f formed in the collecting part 6. Insertion holes 6g and 6h are formed in a reduced diameter portion 6e of the collecting part 6 of the exhaust manifold A, and the partition plate 10 is fixed by a weld line X5 with a portion of the outer circumferential portion of the collecting part 6 in a state where portions 10c and 10d of both end portion of the partition plate 10 are inserted in and positioned to the insertion holes 6g and 6h.

摘要翻译： 排气歧管A在其收集部分结构中包括多个与凸缘头1连接的分支管2至5，收集部分6收集并容纳分支的​​排气下游侧端部2a至5a 管2〜5，其排气下游侧端部10a在收集部6的内部突出的状态配置的隔板10以及由焊接线X固定的传感器安装用凸台部9 收集部6的外周部的一部分，在传送形成在收集部6中的插入孔6f的状态下。插入孔6g，6h形成在排气收集部6的直径减小部6e中 歧管A，并且分隔板10在分隔板10的两端部的部分10c和10d插入的状态下，通过焊接线X5与收集部6的外周部的一部分固定， 插入插入孔6g和6h。

公开(公告)号：US09362205B2

公开(公告)日：2016-06-07

申请号：US13878718

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/373 ,  H01L23/498 ,  H01L25/07 ,  H02M7/537 ,  H01L31/02 ,  H01L23/24 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/537 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead (30) and lead (28) though which high current passes are disposed superimposed on the upper surface of a circuit board (12). Also, a plurality of ceramic substrates (22A-22F) are affixed to the circuit board (12), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead (28) or the other lead (30) via fine metal wires.

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 高电流通过的引线（30）和引线（28）重叠设置在电路板（12）的上表面上。 此外，多个陶瓷基板（22A-22F）固定到电路板（12）上，并且晶体管，二极管或电阻器安装到陶瓷基板的上表面。 此外，诸如晶体管或二极管的电路元件通过细金属线连接到引线（28）或另一引线（30）。

公开(公告)号：US20090288405A1

公开(公告)日：2009-11-26

申请号：US12374011

申请日：2007-06-25

申请人： Takashi Shibasaki

发明人： Takashi Shibasaki

IPC分类号： F01N7/10 ,  F01N7/00

CPC分类号： F01N13/008 ,  F01N13/10 ,  F01N13/1838 ,  F01N13/1872 ,  F01N2450/22

摘要： An exhaust manifold A includes, in its collecting part structure, a plurality of branch pipes 2 to 5 that are connected with a flange head 1, a collecting part 6 that collects and contains exhaust-gas downstream side end portions 2a to 5a of the branch pipes 2 to 5, a partition plate 10 that is arranged in a state where its exhaust-gas downstream side end portion 10a projects in the interior of the collecting part 6, and a sensor attachment boss part 9 that is fixed by weld line X on a part of an outer circumferential portion of the collecting part 6 in a state where it faxes an insertion hole 6f formed in the collecting part 6. Insertion holes 6g and 6h are formed in a reduced diameter portion 6e of the collecting part 6 of the exhaust manifold A, and the partition plate 10 is fixed by a weld line X5 with a portion of the outer circumferential portion of the collecting part 6 in a state where portions 10c and 10d of both end portion of the partition plate 10 are inserted in and positioned to the insertion holes 6g and 6h.

摘要翻译： 排气歧管A在其收集部分结构中包括多个与凸缘头1连接的分支管2至5，收集部分6收集并容纳分支的​​排气下游侧端部2a至5a 管2〜5，其排气下游侧端部10a在收集部6的内部突出的状态配置的隔板10以及由焊接线X固定的传感器安装用凸台部9 收集部6的外周部的一部分，在传送形成在收集部6中的插入孔6f的状态下。插入孔6g，6h形成在排气收集部6的直径减小部6e中 歧管A，并且分隔板10在分隔板10的两端部的部分10c和10d插入的状态下，通过焊接线X5与收集部6的外周部的一部分固定， 插入插入孔6g和6h。

公开(公告)号：US09363894B2

公开(公告)日：2016-06-07

申请号：US13878721

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/29 ,  H01L23/373 ,  H01L23/498 ,  H01L25/07 ,  H01L31/02 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. The hybrid integrated circuit device (10) is provided with: a circuit board (12); a plurality of ceramic substrates (22A-22G) disposed on the top surface of the circuit board (12); circuit elements such as transistors mounted on the top surface of the ceramic substrates (22A-22G); and a lead (29) or the like that is connected to the circuit elements and is exposed to the outside. Furthermore, in the present embodiment, leads (28, 30, 31A-31C) are disposed superimposed in the vicinity of the center of the circuit board (12), and a circuit element such as an IGBT is disposed and electrically connected approaching the region at which the leads are superimposed. The alternating current transformed by the IGBT is output externally via the leads (31A, etc.).

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 混合集成电路装置（10）具有：电路板（12）; 设置在所述电路板（12）的顶表面上的多个陶瓷基板（22A-22G）; 电路元件，例如安装在陶瓷基板（22A-22G）的顶表面上的晶体管; 以及连接到电路元件并暴露于外部的引线（29）等。 此外，在本实施方式中，引线（28,30,31A-31C）重叠配置在电路基板（12）的中心附近，并且电路元件（例如IGBT）被布置并电连接接近该区域 引线叠加在其上。 由IGBT变换的交流电经由引线（31A等）向外部输出。

公开(公告)号：US20130286617A1

公开(公告)日：2013-10-31

申请号：US13878718

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01L23/482 ,  H02M7/537

CPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/537 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead (30) and lead (28) though which high current passes are disposed superimposed on the upper surface of a circuit board (12). Also, a plurality of ceramic substrates (22A-22F) are affixed to the circuit board (12), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead (28) or the other lead (30) via fine metal wires.

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 高电流通过的引线（30）和引线（28）重叠设置在电路板（12）的上表面上。 此外，多个陶瓷基板（22A-22F）固定到电路板（12）上，并且晶体管，二极管或电阻器安装到陶瓷基板的上表面。 此外，诸如晶体管或二极管的电路元件通过细金属线连接到引线（28）或另一引线（30）。

公开(公告)号：US20130286616A1

公开(公告)日：2013-10-31

申请号：US13878724

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.

摘要翻译： 提供了具有优异的耐电压性的电路装置。 实现省略通常设置到电路板的顶表面的树脂层的结构。 具体而言，在包含金属的电路基板（12）的顶面设置有陶瓷基板（22），在陶瓷基板（22）的上表面安装有诸如IGBT的晶体管（34）。 结果，晶体管（34）和电路板（12）通过陶瓷基板（22）彼此绝缘。 包括无机材料的陶瓷基板（22）与常规使用的包含树脂的绝缘层相比具有极高的耐电压性，因此即使将大约1000V的高电压施加到晶体管（34）， 防止晶体管（34）与电路板（12）之间的短路。

公开(公告)号：US08373197B2

公开(公告)日：2013-02-12

申请号：US12568491

申请日：2009-09-28

申请人： Kiyoaki Kudo ,  Takashi Shibasaki ,  Tetsuya Yamamoto

发明人： Kiyoaki Kudo ,  Takashi Shibasaki ,  Tetsuya Yamamoto

IPC分类号： H01L29/74 ,  H01L23/495 ,  H01L23/10 ,  H01L23/34 ,  H01L29/66

CPC分类号： H01L23/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2224/05599

摘要： Provided is a circuit device having a configuration in which thermal interference between built-in elements is suppressed and being miniaturized in total size. A hybrid integrated circuit device of the present invention includes: a circuit substrate, a sealing resin and leads. The circuit substrate in its upper surface is incorporated with a hybrid integrated circuit formed of semiconductor elements and the like respectively fixed to heat spreaders. The sealing resin coats the circuit substrate and thus seals the hybrid integrated circuit. The leads each extend to the outside while being fixed to a pad formed of a conductive pattern. In this hybrid integrated circuit device, the semiconductor elements are mounted on the respective heat spreaders at positions offset from each other, and thereby are arranged to be spaced away from each other.

摘要翻译： 提供一种电路装置，其具有抑制内置元件之间的热干扰并使其总体尺寸小型化的结构。 本发明的混合集成电路器件包括：电路基板，密封树脂和引线。 其上表面的电路基板与分别固定在散热器上的半导体元件等形成的混合集成电路结合。 密封树脂涂覆电路基板，从而密封混合集成电路。 引线各自延伸到外部，同时固定到由导电图案形成的焊盘。 在这种混合集成电路装置中，半导体元件在彼此偏移的位置处安装在相应的散热器上，从而被布置为彼此间隔开。