公开(公告)号：US20230403864A1

公开(公告)日：2023-12-14

申请号：US17840003

申请日：2022-06-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei Ting HSIEH ,  Kuen-Yi CHEN ,  Yi-Hsuan CHEN ,  Yu-Wei TING ,  Yi Ching ONG ,  Kuo-Ching HUANG

IPC: H01L27/11507 ,  G11C11/22

CPC classification number: H01L27/11507 ,  G11C11/221 ,  G11C11/2275

Abstract: A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.

公开(公告)号：US20240147731A1

公开(公告)日：2024-05-02

申请号：US18303131

申请日：2023-04-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Hsuan CHEN ,  Kuen-Yi CHEN ,  Yi Ching ONG ,  Kuo-Ching HUANG

IPC: H10B51/30 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B51/30 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: An interfacial layer is formed in a manner that enables a ferroelectric layer to be formed such that formation of ferroelectric crystalline phases (e.g., orthorhombic crystalline phases) in the ferroelectric layer is increased and formation of non-ferroelectric crystalline phases (e.g., monoclinic phases, tetragonal phases) in the ferroelectric layer is reduced. To achieve this, the grain size and/or other properties of the interfacial layer may be controlled during formation of the interfacial layer such that the grain size and/or other properties of the interfacial layer facilitate formation of a larger grain size in the ferroelectric layer. At larger grain sizes in the ferroelectric layer, the concentration of the ferroelectric crystalline phases in the crystal structure of the ferroelectric layer may be increased relative to if the ferroelectric layer were formed to a smaller grain size.