公开(公告)号：US20240120277A1

公开(公告)日：2024-04-11

申请号：US18543110

申请日：2023-12-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hong-Seng SHUE ,  Sheng-Han TSAI ,  Kuo-Chin CHANG ,  Mirng-Ji LII ,  Kuo-Ching HSU

IPC分类号： H01L23/528 ,  H01L23/00 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L23/5226 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/02235 ,  H01L2224/0224 ,  H01L2224/02245 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/023 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/0805 ,  H01L2224/08052 ,  H01L2224/081 ,  H01L2224/08113 ,  H01L2224/16104

摘要： A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.