公开(公告)号：US20240145379A1

公开(公告)日：2024-05-02

申请号：US18173547

申请日：2023-02-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Kun Lai ,  Wei-Hsiang Tu ,  Ching-Ho Cheng ,  Cheng-Nan Lin ,  Chiang-Jui Chu ,  Chien Hao Hsu ,  Kuo-Chin Chang ,  Mirng-Ji Lii

IPC分类号： H01L23/522 ,  H01L23/498 ,  H01L23/528 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L23/49816 ,  H01L23/528 ,  H01L25/0657 ,  H01L2225/06544

摘要： Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.