公开(公告)号：US12051659B2

公开(公告)日：2024-07-30

申请号：US18314923

申请日：2023-05-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Hsun Huang ,  Po-Han Wang ,  Ing-Ju Lee ,  Chao-Lung Chen ,  Cheng-Ming Wu

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L24/03 ,  H01L21/76855 ,  H01L21/76865 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/08

摘要： Semiconductor devices are provided. The semiconductor device includes a substrate, an interconnect structure, and a conductive pad structure. The interconnect structure is over the substrate and includes a top metal layer. The conductive pad structure is over the interconnect structure and includes a lower barrier film, an upper barrier film, and an aluminum-containing layer. The lower barrier film is on the top metal layer. The upper barrier film is on the lower barrier film and has an amorphous structure. The aluminum-containing layer is on the upper barrier film. The lower barrier film and the upper barrier film are made of a same material, and a nitrogen atomic percentage of the upper barrier film is higher than a nitrogen atomic percentage of the lower barrier film.

公开(公告)号：US11688703B2

公开(公告)日：2023-06-27

申请号：US17719895

申请日：2022-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Hsun Huang ,  Po-Han Wang ,  Ing-Ju Lee ,  Chao-Lung Chen ,  Cheng-Ming Wu

IPC分类号： H01L23/00 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC分类号： H01L24/03 ,  H01L21/76855 ,  H01L21/76865 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L24/08

摘要： Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.