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公开(公告)号：US11742254B2
公开(公告)日：2023-08-29
申请号：US17092543
申请日：2020-11-09
发明人： Tsung-Hsien Chiang , Yu-Chih Huang , Ting-Ting Kuo , Chih-Hsuan Tai , Ban-Li Wu , Ying-Cheng Tseng , Chi-Hui Lai , Chiahung Liu , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L23/31 , H01L23/528 , H01L23/522 , H01L21/56 , H01L21/768 , H01L23/00
CPC分类号： H01L23/3171 , H01L21/565 , H01L21/76837 , H01L23/528 , H01L23/5226 , H01L24/09 , H01L2224/02373
摘要： In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
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公开(公告)号：US20210272941A1
公开(公告)日：2021-09-02
申请号：US17321528
申请日：2021-05-17
发明人： Chih-Hsuan Tai , Hao-Yi Tsai , Yu-Chih Huang , Chia-Hung Liu , Ting-Ting Kuo , Ban-Li Wu , Ying-Cheng Tseng , Chi-Hui Lai
摘要： A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.
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公开(公告)号：US20210057302A1
公开(公告)日：2021-02-25
申请号：US17092543
申请日：2020-11-09
发明人： Tsung-Hsien Chiang , Yu-Chih Huang , Ting-Ting Kuo , Chih-Hsuan Tai , Ban-Li Wu , Ying-Cheng Tseng , Chi-Hui Lai , Chiahung Liu , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
IPC分类号： H01L23/31 , H01L23/528 , H01L23/522 , H01L21/56 , H01L21/768 , H01L23/00
摘要： In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.
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公开(公告)号：US20240088307A1
公开(公告)日：2024-03-14
申请号：US18513644
申请日：2023-11-20
发明人： Chih-Hsuan Tai , Hao-Yi Tsai , Yu-Chih Huang , Chih-Hao Chang , Chia-Hung Liu , Ban-Li Wu , Ying-Cheng Tseng , Po-Chun Lin
IPC分类号： H01L31/0203 , H01L31/02 , H01L31/024 , H01L31/18
CPC分类号： H01L31/0203 , H01L31/02002 , H01L31/024 , H01L31/1892
摘要： A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.
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公开(公告)号：US20220285566A1
公开(公告)日：2022-09-08
申请号：US17750419
申请日：2022-05-23
发明人： Chih-Hsuan Tai , Hao-Yi Tsai , Yu-Chih Huang , Chih-Hao Chang , Chia-Hung Liu , Ban-Li Wu , Ying-Cheng Tseng , Po-Chun Lin
IPC分类号： H01L31/0203 , H01L31/18 , H01L31/024 , H01L31/02
摘要： A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.
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公开(公告)号：US11049850B2
公开(公告)日：2021-06-29
申请号：US16876471
申请日：2020-05-18
发明人： Chih-Hsuan Tai , Chi-Hui Lai , Ying-Cheng Tseng , Ban-Li Wu , Ting-Ting Kuo , Yu-Chih Huang , Chiahung Liu , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
摘要： A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.
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公开(公告)号：US20200279837A1
公开(公告)日：2020-09-03
申请号：US16876471
申请日：2020-05-18
发明人： Chih-Hsuan Tai , Chi-Hui Lai , Ying-Cheng Tseng , Ban-Li Wu , Ting-Ting Kuo , Yu-Chih Huang , Chiahung Liu , Hao-Yi Tsai , Chung-Shi Liu , Chen-Hua Yu
摘要： A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.
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公开(公告)号：US20190131287A1
公开(公告)日：2019-05-02
申请号：US16129479
申请日：2018-09-12
发明人： Yu-Chih Huang , Chi-Hui Lai , Ban-Li Wu , Ying-Cheng Tseng , Ting-Ting Kuo , Chih-Hsuan Tai , Hao-Yi Tsai , Chuei-Tang Wang , Chung-Shi Liu , Chen-Hua Yu , Chiahung Liu
IPC分类号： H01L25/16 , H01L23/498 , H01L21/48 , H01L21/50
摘要： A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
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公开(公告)号：US12015017B2
公开(公告)日：2024-06-18
申请号：US17321528
申请日：2021-05-17
发明人： Chih-Hsuan Tai , Hao-Yi Tsai , Yu-Chih Huang , Chia-Hung Liu , Ting-Ting Kuo , Ban-Li Wu , Ying-Cheng Tseng , Chi-Hui Lai
CPC分类号： H01L25/105 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/568 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/50 , H01L24/16 , H01L24/48 , H01L2224/16227 , H01L2224/48227 , H01L2225/1058
摘要： A package structure including a first redistribution layer, a semiconductor die, through insulator vias, an insulating encapsulant and a second redistribution layer. The first redistribution layer includes a dielectric layer, a conductive layer, and connecting portions electrically connected to the conductive layer. The dielectric layer has first and second surfaces, the connecting portions has a first side, a second side, and sidewalls joining the first side to the second side. The first side of the connecting portions is exposed from and coplanar with the first surface of the dielectric layer. The semiconductor die is disposed on the second surface of the dielectric layer. The through insulator vias are connected to the conductive layer. The insulating encapsulant is disposed on the dielectric layer and encapsulating the semiconductor die and the through insulator vias. The second redistribution layer is disposed on the semiconductor die and over the insulating encapsulant.
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公开(公告)号：US20240194591A1
公开(公告)日：2024-06-13
申请号：US18582494
申请日：2024-02-20
发明人： Chih-Hsuan Tai , Hao-Yi Tsai , Tsung-Hsien Chiang , Yu-Chih Huang , Chia-Hung Liu , Ban-Li Wu , Ying-Cheng Tseng , Po-Chun Lin
IPC分类号： H01L23/522 , H01L21/56 , H01L21/768 , H01L23/00 , H01L23/31 , H01L23/367 , H01L23/48 , H01L23/528
CPC分类号： H01L23/5226 , H01L21/56 , H01L21/76898 , H01L23/3171 , H01L23/3675 , H01L23/481 , H01L23/5283 , H01L24/09 , H01L24/17 , H01L24/33 , H01L24/73 , H01L2224/0231 , H01L2224/02373 , H01L2224/02379 , H01L2224/02381 , H01L2224/73204
摘要： A package structure includes a thermal dissipation structure including a substrate, a first encapsulant laterally covering the substrate, a die disposed on the substrate and including a sensing region, a second encapsulant laterally covering the die, and a redistribution structure disposed on the die and the second encapsulant. An outer sidewall of the second encapsulant is laterally offset from an outer sidewall of the first encapsulant. The die is electrically coupled to the substrate through the redistribution structure, and the redistribution structure includes a hollow region overlying the sensing region of the die.
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