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    Photomask having a plurality of shielding layers
    4.
    发明授权
    Photomask having a plurality of shielding layers 有权

    公开(公告)号：US10095102B2

    公开(公告)日：2018-10-09

    申请号：US15362089

    申请日：2016-11-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen

    IPC: G03F1/26 ,  G03F1/54 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

    Abstract: In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.

    Mask overlay control
    6.
    发明授权
    Mask overlay control 有权
    面膜叠加控制

    公开(公告)号：US09377701B2

    公开(公告)日：2016-06-28

    申请号：US14696596

    申请日：2015-04-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Chien-Chih Chen ,  Chen-Shao Hsu

    IPC: G03F1/22 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70783 ,  G03F1/22 ,  G03F1/70 ,  G03F9/7069

    Abstract: In some embodiments, a mask patterning system includes an electronic memory configured to store an integrated circuit mask layout. A computation tool determines a number of radiation shots to be used to write the integrated circuit mask layout to a physical mask. The computation tool also determines a scaling factor which accounts for expected thermal expansion of the physical mask due to the number of radiation shots used in writing the integrated circuit mask layout to the physical mask. An ebeam or laser writing tool writes the integrated circuit mask layout to the physical mask based on the scaling factor and by using the number of radiation shots.

    Abstract translation: 在一些实施例中，掩模图案形成系统包括被配置为存储集成电路掩模布局的电子存储器。 计算工具确定用于将集成电路掩模布局写入物理掩模的多个辐射照射。 计算工具还确定了由于在将集成电路掩模布局写入物理掩模中使用的辐射照射的数量而导致物理掩模的预期热膨胀的缩放因子。 ebeam或激光写入工具根据缩放因子和使用辐射数量将集成电路掩模布局写入物理掩模。

    System and method for performing spin dry etching
    7.
    发明授权
    System and method for performing spin dry etching 有权

    公开(公告)号：US10276426B2

    公开(公告)日：2019-04-30

    申请号：US15204761

    申请日：2016-07-07

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen

    IPC: H01L21/687 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32

    Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

    Moveable and adjustable gas injectors for an etching chamber
    8.
    发明授权
    Moveable and adjustable gas injectors for an etching chamber 有权

    公开(公告)号：US10157805B2

    公开(公告)日：2018-12-18

    申请号：US15178623

    申请日：2016-06-10

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tzung-Shiun Lu ,  Chun-Lang Chen ,  Shih-Hao Yang ,  Jong-Yuh Chang

    IPC: H01L21/66 ,  H01L21/3065 ,  C23C16/455 ,  H01J37/32

    Abstract: An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.

    Moveable and adjustable gas injectors for an etching chamber
    10.
    发明授权
    Moveable and adjustable gas injectors for an etching chamber 有权
    用于蚀刻室的可移动和可调气体喷射器

    公开(公告)号：US09373551B2

    公开(公告)日：2016-06-21

    申请号：US14089783

    申请日：2013-11-26

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tzung-Shiun Lu ,  Chun-Lang Chen ,  Shih-Hao Yang ,  Jong-Yuh Chang

    IPC: H01J37/32 ,  C23C16/455 ,  H01L21/66

    CPC classification number: H01L22/26 ,  C23C16/455 ,  C23C16/45587 ,  C23C16/45589 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/12

    Abstract: An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.

    Abstract translation: 一种用于在衬底处理期间增加化学气相沉积和蚀刻的临界尺寸的均匀性的装置，包括用于将处理气体引入蚀刻室的多个气体注入器。 多个气体喷射器中的每个气体喷射器沿着蚀刻室内的轨道设置并沿轨迹移动。 此外，每个气体喷射器与节流阀或喷嘴联接以允许调节处理气体流量。 用于在衬底处理期间增加化学气相沉积和蚀刻的临界尺寸的均匀性的方法包括使用多个可移动和可调节的气体注入器进行化学沉积或蚀刻并测量临界尺寸均匀性。 进行至少一个气体喷射器的位置的调整或者对至少一个气体喷射器的处理气体流速的调整以增加临界尺寸的均匀性。

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