公开(公告)号：US10535554B2

公开(公告)日：2020-01-14

申请号：US15725558

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Sheng Tang ,  Fu-Chen Chang ,  Cheng-Lin Huang ,  Chun-Yen Lo ,  Wen-Ming Chen ,  Kuo-Chio Liu

IPC: H01L23/495 ,  H01L23/522 ,  H01L21/304 ,  H01L21/56 ,  H01L21/768 ,  H01L21/683 ,  H01L21/67 ,  H01L23/00 ,  H01L23/48 ,  H01L21/78 ,  H01L23/498 ,  H01L25/10 ,  H01L23/58 ,  H01L25/065 ,  H01L25/00

Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.

公开(公告)号：US11004728B2

公开(公告)日：2021-05-11

申请号：US16741078

申请日：2020-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Sheng Tang ,  Fu-Chen Chang ,  Cheng-Lin Huang ,  Wen-Ming Chen ,  Chun-Yen Lo ,  Kuo-Chio Liu

IPC: H01L23/544 ,  H01L23/28 ,  H01L21/78 ,  H01L23/495 ,  H01L23/522 ,  H01L21/304 ,  H01L21/768 ,  H01L21/683 ,  H01L21/67 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L25/10 ,  H01L23/58 ,  H01L25/065 ,  H01L25/00

Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.