-
公开(公告)号：US10256233B2
公开(公告)日：2019-04-09
申请号：US15883899
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Huan-Kuan Su , Yu-Hong Pan , Jen-Pan Wang , Tong-Min Weng , Tsung-Han Wu
Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.
-
公开(公告)号：US20180342502A1
公开(公告)日：2018-11-29
申请号：US15883899
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Huan-Kuan Su , Yu-Hong Pan , Jen-Pan Wang , Tong-Min Weng , Tsung-Han Wu
CPC classification number: H01L27/0629 , H01L28/20 , H01L28/60
Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.
-
Search Results
2
records
(took 0.012 seconds)
