公开(公告)号：US20250014946A1

公开(公告)日：2025-01-09

申请号：US18348967

申请日：2023-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fan Hsuan Chien ,  Su-Yu Yeh ,  Teng-Ta Hung ,  Chun-Jen Chen ,  Pei Yen Cheng ,  Shih-Chi Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: A method includes etching a gate stack to form a trench extending through the gate stack, the gate stack including a metal gate electrode and a gate dielectric, wherein forming the trench removes a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion; extending the trench through an isolation region under the gate stack and into a semiconductor substrate under the isolation region; conformally depositing a first dielectric material on surfaces in the trench; and depositing a second dielectric material on the first dielectric material to fill the trench, wherein the first dielectric material is a more flexible material than the second dielectric material.