公开(公告)号：US11222821B2

公开(公告)日：2022-01-11

申请号：US16881406

申请日：2020-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Wei Tseng ,  Kuo-Chiang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/11 ,  H01L21/311

Abstract: First and second gates and first and second conductive contacts are disposed over a substrate. First and second vias are disposed over the first and second conductive contacts, respectively. A first gate contact is disposed over the first gate. A dielectric structure is disposed over the first gate and over the second gate. A first portion of the dielectric structure is disposed between the first and second vias. A second portion of the dielectric structure is disposed between the first via and the first gate contact. A first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact. A second interface between the first gate and the first gate contact constitutes a second percentage of an upper surface area of the first gate. The first percentage is greater than the second percentage.

公开(公告)号：US20200286783A1

公开(公告)日：2020-09-10

申请号：US16881406

申请日：2020-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Wei Tseng ,  Kuo-Chiang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/11

Abstract: First and second gates and first and second conductive contacts are disposed over a substrate. First and second vias are disposed over the first and second conductive contacts, respectively. A first gate contact is disposed over the first gate. A dielectric structure is disposed over the first gate and over the second gate. A first portion of the dielectric structure is disposed between the first and second vias. A second portion of the dielectric structure is disposed between the first via and the first gate contact. A first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact. A second interface between the first gate and the first gate contact constitutes a second percentage of an upper surface area of the first gate. The first percentage is greater than the second percentage.

公开(公告)号：US10665506B2

公开(公告)日：2020-05-26

申请号：US16148071

申请日：2018-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Wei Tseng ,  Kuo-Chiang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/11 ,  H01L21/311

Abstract: First and second gates and first and second conductive contacts are disposed over a substrate. First and second vias are disposed over the first and second conductive contacts, respectively. A first gate contact is disposed over the first gate. A dielectric structure is disposed over the first gate and over the second gate. A first portion of the dielectric structure is disposed between the first and second vias. A second portion of the dielectric structure is disposed between the first via and the first gate contact. A first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact. A second interface between the first gate and the first gate contact constitutes a second percentage of an upper surface area of the first gate. The first percentage is greater than the second percentage.

公开(公告)号：US20200006139A1

公开(公告)日：2020-01-02

申请号：US16148071

申请日：2018-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Wei Tseng ,  Kuo-Chiang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L27/11

Abstract: First and second gates and first and second conductive contacts are disposed over a substrate. First and second vias are disposed over the first and second conductive contacts, respectively. A first gate contact is disposed over the first gate. A dielectric structure is disposed over the first gate and over the second gate. A first portion of the dielectric structure is disposed between the first and second vias. A second portion of the dielectric structure is disposed between the first via and the first gate contact. A first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact. A second interface between the first gate and the first gate contact constitutes a second percentage of an upper surface area of the first gate. The first percentage is greater than the second percentage.