公开(公告)号：US10991756B2

公开(公告)日：2021-04-27

申请号：US16411706

申请日：2019-05-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chih Lai ,  Chung-Te Lin ,  Min Cao ,  Randy Osborne

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: Various embodiments of the present application are directed towards a bipolar selector having independently tunable threshold voltages, as well as a memory cell comprising the bipolar selector and a memory array comprising the memory cell. In some embodiments, the bipolar selector comprises a first unipolar selector and a second unipolar selector. The first and second unipolar selectors are electrically coupled in parallel with opposite orientations and may, for example, be diodes or some other suitable unipolar selectors. By placing the first and second unipolar selectors in parallel with opposite orientations, the first unipolar selector independently defines a first threshold voltage of the bipolar selector and the second unipolar selector independently defines a second threshold voltage of the bipolar selector. As a result, the first and second threshold voltages can be independently tuned by adjusting parameters of the first and second unipolar selectors.

公开(公告)号：US11133044B2

公开(公告)日：2021-09-28

申请号：US15995578

申请日：2018-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Katherine Chiang ,  Chung-Te Lin ,  Min Cao ,  Randy Osborne

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: In some embodiments, the present disclosure relates to an integrated circuit. The integrated circuit includes a first memory device and a second memory device arranged over a substrate. The first memory device is coupled to a first bit-line. The second memory device is coupled to a second bit-line. A shared control element is arranged within the substrate and is configured to provide access to the first memory device and to separately provide access to the second memory device. The shared control element includes one or more control devices sharing one or more components.

公开(公告)号：US20210233958A1

公开(公告)日：2021-07-29

申请号：US17230222

申请日：2021-04-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chih Lai ,  Chung-Te Lin ,  Min Cao ,  Randy Osborne

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08

Abstract: Various embodiments of the present application are directed towards a bipolar selector having independently tunable threshold voltages, as well as a memory cell comprising the bipolar selector and a memory array comprising the memory cell. In some embodiments, the bipolar selector comprises a first unipolar selector and a second unipolar selector. The first and second unipolar selectors are electrically coupled in parallel with opposite orientations and may, for example, be diodes or some other suitable unipolar selectors. By placing the first and second unipolar selectors in parallel with opposite orientations, the first unipolar selector independently defines a first threshold voltage of the bipolar selector and the second unipolar selector independently defines a second threshold voltage of the bipolar selector. As a result, the first and second threshold voltages can be independently tuned by adjusting parameters of the first and second unipolar selectors.