公开(公告)号：US20220293647A1

公开(公告)日：2022-09-15

申请号：US17197291

申请日：2021-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Ming-Che Lee

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.

公开(公告)号：US12176372B2

公开(公告)日：2024-12-24

申请号：US17197291

申请日：2021-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Ming-Che Lee

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.

公开(公告)号：US11189583B2

公开(公告)日：2021-11-30

申请号：US16723041

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chau Chen ,  Shih-Pei Chou ,  Ming-Che Lee ,  Kuo-Ming Wu ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure comprises a semiconductive substrate and an interconnect structure over the semiconductive substrate. The semiconductor structure also comprises a bond pad in the semiconductive substrate and coupled to the metal layer. The bond pad comprises two conductive layers.