公开(公告)号：US20140231967A1

公开(公告)日：2014-08-21

申请号：US13771382

申请日：2013-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chuan Teng ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Hsin-Ting Huang ,  Lin-Min Hung ,  Yao-Te Huang ,  Chin-Yi Cho

IPC: H01L21/18 ,  H01L29/06

CPC classification number: H01L21/185 ,  B81C1/00269 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/564 ,  H01L29/06 ,  H01L2224/94 ,  H01L2924/18161 ,  H01L2224/83

Abstract: A method for fabricating a semiconductor device is disclosed. A first substrate is arranged over a second substrate. A wafer bonding process is performed on the semiconductor device. First regions of the device are enclosed by the bonding process. Second regions of the device remain exposed. One or more processes are performed on the exposed second regions, after performing the wafer bonding process. The one or more processes include a fill process that forms a fill material within the exposed second regions. An edge seal material is applied on the first and second substrates after performing the one or more processes.

Abstract translation: 公开了一种制造半导体器件的方法。 第一衬底被布置在第二衬底上。 在半导体器件上进行晶片接合处理。 设备的第一个区域由绑定过程包围。 设备的第二个区域保持暴露。 在进行晶片接合处理之后，在暴露的第二区域上执行一个或多个处理。 一个或多个过程包括在暴露的第二区域内形成填充材料的填充过程。 在执行一个或多个处理之后，在第一和第二基板上施加边缘密封材料。

公开(公告)号：US08841201B2

公开(公告)日：2014-09-23

申请号：US13771382

申请日：2013-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Chuan Teng ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Hsin-Ting Huang ,  Lin-Min Hung ,  Yao-Te Huang ,  Chin-Yi Cho

IPC: H01L21/46 ,  H01L29/06 ,  H01L21/18

CPC classification number: H01L21/185 ,  B81C1/00269 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/564 ,  H01L29/06 ,  H01L2224/94 ,  H01L2924/18161 ,  H01L2224/83

Abstract: A method for fabricating a semiconductor device is disclosed. A first substrate is arranged over a second substrate. A wafer bonding process is performed on the semiconductor device. First regions of the device are enclosed by the bonding process. Second regions of the device remain exposed. One or more processes are performed on the exposed second regions, after performing the wafer bonding process. The one or more processes include a fill process that forms a fill material within the exposed second regions. An edge seal material is applied on the first and second substrates after performing the one or more processes.

Abstract translation: 公开了一种制造半导体器件的方法。 第一衬底被布置在第二衬底上。 在半导体器件上进行晶片接合处理。 设备的第一个区域由绑定过程包围。 设备的第二个区域保持暴露。 在进行晶片接合处理之后，在暴露的第二区域上执行一个或多个处理。 一个或多个过程包括在暴露的第二区域内形成填充材料的填充过程。 在执行一个或多个处理之后，在第一和第二基板上施加边缘密封材料。