公开(公告)号：US11906898B2

公开(公告)日：2024-02-20

申请号：US16989744

申请日：2020-08-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chieh Tien ,  Cheng-Hsuen Chiang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Yen-Wei Huang ,  Hao-Ming Chang ,  Kuo-Chin Lin ,  Kuan-Shien Lee

IPC: G03F1/32 ,  G03F1/38 ,  H01L21/308 ,  G03F1/80

CPC classification number: G03F1/32 ,  G03F1/38 ,  G03F1/80 ,  H01L21/3083

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

公开(公告)号：US10508953B2

公开(公告)日：2019-12-17

申请号：US15490075

申请日：2017-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-An Yang ,  Hao-Ming Chang ,  Shao-Chi Wei ,  Kuo-Chin Lin ,  Sheng-Chang Hsu ,  Li-Chih Lu ,  Cheng-Ming Lin

IPC: G01J5/00 ,  H01L21/67 ,  G01J5/10

Abstract: A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.