公开(公告)号：US10943802B2

公开(公告)日：2021-03-09

申请号：US16233701

申请日：2018-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Shi-Ming Wang ,  Su-Yu Yeh ,  Li-Jen Wu ,  Oliver Yu ,  Wen-Shiung Chen

IPC: H01L21/67 ,  G03F7/16

Abstract: The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.

公开(公告)号：US11061333B2

公开(公告)日：2021-07-13

申请号：US15905739

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Su-Yu Yeh ,  Li-Jen Wu ,  Zhi-You Ke ,  Ming-Hung Lin

IPC: G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/66 ,  G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/16 ,  G03F7/30 ,  H01L29/66 ,  H01L21/67 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

公开(公告)号：US11004709B2

公开(公告)日：2021-05-11

申请号：US16127919

申请日：2018-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chieh Hsieh ,  Su-Yu Yeh ,  Ko-Bin Kao ,  Chia-Hung Chung ,  Li-Jen Wu ,  Chun-Yu Chen ,  Hung-Ming Chen ,  Yong-Ting Wu

IPC: H01L21/67 ,  G01N33/00 ,  H01L21/673 ,  B05C15/00

Abstract: A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.

公开(公告)号：US11029603B2

公开(公告)日：2021-06-08

申请号：US16226139

申请日：2018-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Kai Chen ,  Forster Yuan ,  Ko-Bin Kao ,  Shi-Ming Wang ,  Su-Yu Yeh ,  Li-Jen Wu ,  Oliver Yu

IPC: G03F7/16 ,  H01L21/67 ,  B25J9/16 ,  B25J5/00 ,  G06K19/07

Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

公开(公告)号：US20190146348A1

公开(公告)日：2019-05-16

申请号：US15905739

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Su-Yu Yeh ,  Li-Jen Wu ,  Zhi-You Ke ,  Ming-Hung Lin

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/66 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.