公开(公告)号：US20250066899A1

公开(公告)日：2025-02-27

申请号：US18454702

申请日：2023-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yen LIAO ,  I. LEE ,  Shu-Lan CHANG ,  Sheng-Hsuan LIN ,  Feng-Yu CHANG ,  Wei-Jung LIN ,  Chun-I TSAI ,  Chih-Chien CHI ,  Ming-Hsing TSAI ,  Pei Shan CHANG ,  Chih-Wei CHANG

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/58

Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.