公开(公告)号：US20210242078A1

公开(公告)日：2021-08-05

申请号：US16943815

申请日：2020-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hwei-Jay CHU ,  Chieh-Han WU ,  Cheng-Hsiung TSAI ,  Chih-Wei LU ,  Chung-Ju LEE

IPC: H01L21/768 ,  H01L23/528 ,  H01L29/78 ,  H01L29/66 ,  H01L23/522

Abstract: A method for forming a semiconductor structure includes forming a first cap layer over a metal layer. The method also includes patterning the metal layer and the first cap layer to form openings exposing the gate structure, and forming a first dielectric layer in the openings, and patterning the first cap layer to form a via cap plug over the metal layer. The method also includes forming a second dielectric layer over the via cap plug and the metal layer, and forming a trench in the second dielectric material to expose the via cap plug. The method also includes removing the via cap plug to enlarge the trench and filling the trench with a conductive material.