公开(公告)号：US10522349B2

公开(公告)日：2019-12-31

申请号：US16176533

申请日：2018-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Han Yang ,  Tsung-Han Wu ,  Chih-Wei Chang ,  Hsin-mei Lin ,  I-Chun Hsieh ,  Hsi-Yen Chang

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/306 ,  H01L21/266 ,  H01L21/265 ,  G03F7/38 ,  G03F7/20 ,  G03F7/26 ,  G03F7/09 ,  G03F7/16

Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.

公开(公告)号：US20190164745A1

公开(公告)日：2019-05-30

申请号：US16176533

申请日：2018-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Han Yang ,  Tsung-Han Wu ,  Chih-Wei Chang ,  Hsin-mei Lin ,  I-Chun Hsieh ,  Hsi-Yen Chang

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/306 ,  H01L21/266 ,  H01L21/265 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  G03F7/09 ,  G03F7/38

Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.

公开(公告)号：US11158505B2

公开(公告)日：2021-10-26

申请号：US16721355

申请日：2019-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Han Yang ,  Tsung-Han Wu ,  Chih-Wei Chang ,  Hsin-mei Lin ,  I-Chun Hsieh ,  Hsi-Yen Chang

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/308 ,  H01L21/306 ,  H01L21/266 ,  G03F7/38 ,  G03F7/20 ,  G03F7/26 ,  G03F7/09 ,  G03F7/16 ,  H01L21/033

Abstract: A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.