公开(公告)号：US11171085B2

公开(公告)日：2021-11-09

申请号：US16222107

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Kai Tzeng ,  Cheng-Jen Lin ,  Chin-Yu Ku

IPC: H01L23/522 ,  H01L23/528 ,  H01L49/02 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate includes a first region and a second region. The semiconductor device structure includes a first conductive structure formed over the first region of the substrate and a bottom magnetic layer formed over the second region of the substrate. The semiconductor device structure also includes a second conductive structure formed over the bottom magnetic layer and a first insulating layer formed over a sidewall surface of the first conductive structure. The semiconductor device structure further includes a second insulating layer formed over the first insulating layer, and the second insulating layer has a stair-shaped structure.