公开(公告)号：US20230040346A1

公开(公告)日：2023-02-09

申请号：US17701402

申请日：2022-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiang-Pi CHANG ,  Huang-Lin CHAO ,  Chung-Liang CHENG ,  Pinyen LIN ,  Chun-Chun LIN ,  Tzu-Li LEE ,  Yu-Chia LIANG ,  Duen-Huei HOU ,  Wen-Chung LIU ,  Chun-I WU

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.