公开(公告)号：US20200091007A1

公开(公告)日：2020-03-19

申请号：US16277326

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chu-An LEE ,  Chen-Hao WU ,  Peng-Chung JANGJIAN ,  Chun-Wen HSIAO ,  Teng-Chun TSAI ,  Huang-Lin CHAO

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate, an isolation feature between and adjacent to the first fin and the second fin, and a fin isolation structure between the first fin and the second fin. The fin isolation structure includes a first insulating layer partially embedded in the isolation feature, a second insulating layer having sidewall surfaces and a bottom surface that are covered by the first insulating layer, a first capping layer covering the second insulating layer and having sidewall surfaces that are covered by the first insulating layer, and a second capping layer having sidewall surfaces and a bottom surface that are covered by the first capping layer.

公开(公告)号：US20210098283A1

公开(公告)日：2021-04-01

申请号：US16953949

申请日：2020-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan LEE ,  Teng-Chun TSAI ,  Chen-Hao WU ,  Chu-An LEE ,  Chun-Hung LIAO ,  Tsung-Ling TSAI

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.

公开(公告)号：US20200090983A1

公开(公告)日：2020-03-19

申请号：US16129899

申请日：2018-09-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan LEE ,  Teng-Chun TSAI ,  Chen-Hao WU ,  Chu-An LEE ,  Chun-Hung LIAO ,  Tsung-Ling TSAI

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (H2O2), potassium periodate (KIO4), potassium iodate (KIO3), potassium permanganate (KMnO4), iron(III) nitrate (FeNO3) and a combination thereof.