公开(公告)号：US11075242B2

公开(公告)日：2021-07-27

申请号：US15962130

申请日：2018-04-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chia Kuo ,  Jhy-Jyi Sze ,  Tung-Ting Wu ,  Yimin Huang

IPC分类号： H01L27/146 ,  H01L31/0236 ,  H01L31/0232

摘要： The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.

公开(公告)号：US20210098392A1

公开(公告)日：2021-04-01

申请号：US16589460

申请日：2019-10-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tung-Ting Wu ,  Chen-Jong Wang ,  Jen-Cheng Liu ,  Yimin Huang ,  Chin-Chia Kuo

IPC分类号： H01L23/58 ,  H01L27/146

摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

公开(公告)号：US11862654B2

公开(公告)日：2024-01-02

申请号：US17150014

申请日：2021-01-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

IPC分类号： H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14687 ,  H01L27/14643

摘要： Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

公开(公告)号：US20220231066A1

公开(公告)日：2022-07-21

申请号：US17150014

申请日：2021-01-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

IPC分类号： H01L27/146

摘要： Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

公开(公告)号：US11348881B2

公开(公告)日：2022-05-31

申请号：US16589460

申请日：2019-10-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tung-Ting Wu ,  Chen-Jong Wang ,  Jen-Cheng Liu ,  Yimin Huang ,  Chin-Chia Kuo

IPC分类号： H01L23/58 ,  H01L27/146

摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

公开(公告)号：US20190165026A1

公开(公告)日：2019-05-30

申请号：US15962130

申请日：2018-04-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-Chia Kuo ,  Jhy-Jyi Sze ,  Tung-Ting Wu ,  Yimin Huang

IPC分类号： H01L27/146

摘要： The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.