公开(公告)号：US10658479B2

公开(公告)日：2020-05-19

申请号：US16191085

申请日：2018-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsien Chu ,  Chiang-Ming Chuang ,  Cheng-Huan Chung

IPC: H01L29/423 ,  H01L27/11521 ,  H01L21/321 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/28 ,  H01L29/788 ,  H01L27/11534 ,  H01L27/11524

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

公开(公告)号：US11018233B2

公开(公告)日：2021-05-25

申请号：US16875635

申请日：2020-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsien Chu ,  Chiang-Ming Chuang ,  Cheng-Huan Chung

IPC: H01L29/423 ,  H01L27/11521 ,  H01L21/321 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/28 ,  H01L29/788 ,  H01L27/11534 ,  H01L27/11524

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.