公开(公告)号：US20230134161A1

公开(公告)日：2023-05-04

申请号：US17704882

申请日：2022-03-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Chien CHENG ,  Kuo-Cheng CHIANG ,  Shi Ning JU ,  Guan-Lin CHEN ,  Bo-Rong LIN ,  Chih-Hao WANG

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/66

Abstract: An integrated circuit includes a transistor having a plurality of semiconductor nanostructures arranged in a stack and corresponding to channel regions of the transistor. The transistor includes a source/drain region in contact with the channel regions. The transistor includes a silicide that extends downward along a side of the source/drain region.

公开(公告)号：US20220359652A1

公开(公告)日：2022-11-10

申请号：US17562794

申请日：2021-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Rong LIN ,  Kuo-Cheng CHIANG ,  Shi Ning JU ,  Guan-Lin CHEN ,  Jung-Chien CHENG ,  Chih-Hao WANG

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate and a transistor. The transistor includes a first channel region overlying the substrate and a source/drain region in contact with the first channel region. The source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region.

公开(公告)号：US20240395857A1

公开(公告)日：2024-11-28

申请号：US18789179

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Rong LIN ,  Kuo-Cheng CHIANG ,  Shi Ning JU ,  Guan-Lin CHEN ,  Jung-Chien CHENG ,  Chih-Hao WANG

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a substrate and a transistor. The transistor includes a first channel region overlying the substrate and a source/drain region in contact with the first channel region. The source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region.