公开(公告)号：US20220376479A1

公开(公告)日：2022-11-24

申请号：US17741487

申请日：2022-05-11

Applicant: TRUMPF Photonic Components GmbH

Inventor： Alexander Weigl ,  Armand Pruijmboom

IPC: H01S5/42 ,  H01S5/183

Abstract: A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.