公开(公告)号：US20220376479A1

公开(公告)日：2022-11-24

申请号：US17741487

申请日：2022-05-11

Applicant: TRUMPF Photonic Components GmbH

Inventor： Alexander Weigl ,  Armand Pruijmboom

IPC: H01S5/42 ,  H01S5/183

Abstract: A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.

公开(公告)号：US20210296853A1

公开(公告)日：2021-09-23

申请号：US17204004

申请日：2021-03-17

Applicant: TRUMPF Photonic Components GmbH

Inventor： Roman Koerner ,  Alexander Weigl

IPC: H01S5/042

Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.

公开(公告)号：US20210104867A1

公开(公告)日：2021-04-08

申请号：US17123148

申请日：2020-12-16

Applicant: TRUMPF Photonic Components GmbH

Inventor： Alexander Weigl ,  Stephan Gronenborn ,  Holger Joachim Moench

IPC: H01S5/042 ,  G01S17/894 ,  G01S7/484 ,  G01S17/10 ,  H01S5/42 ,  H01S5/183 ,  H01S5/02335

Abstract: A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.

公开(公告)号：US11862933B2

公开(公告)日：2024-01-02

申请号：US17204004

申请日：2021-03-17

Applicant: TRUMPF Photonic Components GmbH

Inventor： Roman Koerner ,  Alexander Weigl

IPC: H01S5/183 ,  H01S5/042

CPC classification number: H01S5/0421 ,  H01S5/183

Abstract: A method of forming an electrical metal contact within a semiconductor layer stack of a vertical cavity surface emitting laser includes forming a contact hole into the semiconductor layer stack. The contact hole has a bottom and a side wall extending from the bottom. The method further includes providing a photoresist mask inside the contact hole. The photoresist mask covers the side wall of the contact hole and has an opening extending to the bottom of the contact hole. The method additionally includes wet-chemical isotropic etching the bottom of the contact hole, depositing a metal on the bottom of the contact hole, and removing the photoresist mask so that the metal on the bottom of the contact hole is left as the electrical metal contact.

公开(公告)号：US20240372329A1

公开(公告)日：2024-11-07

申请号：US18776278

申请日：2024-07-18

Applicant: TRUMPF Photonic Components GmbH

Inventor： Roman Koerner ,  Alexander Weigl

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor component for emitting laser light includes a main body having at least one mesa portion with an emission region for the laser light. The emission region includes a first mirror portion, a second mirror portion, and an active portion arranged between the first mirror portion and the second mirror portion. The active portion serves to generate the laser light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, and a metallic polarization grating arranged on a surface of the main body on the emission region.

公开(公告)号：US20240128719A1

公开(公告)日：2024-04-18

申请号：US18397856

申请日：2023-12-27

Applicant: TRUMPF Photonic Components GmbH

Inventor： Roman Koerner ,  Alexander Weigl ,  Holger Joachim Moench ,  Berthold Schmidt

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/42

CPC classification number: H01S5/18308 ,  H01S5/0217 ,  H01S5/18305 ,  H01S5/423 ,  H01S5/34

Abstract: A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.